Methods of patterning materials

Abstract

Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.

1. A method of patterning a material, comprising:
 forming a plurality of spaced-apart structures over the material, individual structures of said plurality having shapes containing a first linear segment laterally offset from a second linear segment, and containing a jog connecting the first and second linear segments to one another; 
 forming rings around the structures over the material; the rings having interior regions with the shapes of the individual structures, and thus having first and second linear segments laterally offset from one another, and connected to one another through a jog; 
 forming a patterned mask over the rings; the patterned mask having first and second trenches extending through patterned masking material; the patterned mask and the rings together defining a plurality of openings over the material; the openings being arranged in two rows, with one row comprising openings defined within the first trench, and with the other row comprising openings defined within the second trench; and 
 extending said openings into the material to form openings in the material. 
 
     
     
       2. The method of  claim 1  wherein the patterned mask comprises photoresist. 
     
     
       3. The method of  claim 1  wherein the rings comprise silicon dioxide. 
     
     
       4. The method of  claim 1  wherein the material is a carbon-containing material. 
     
     
       5. A method of patterning a material, comprising:
 forming a plurality of spaced-apart structures over the material, individual structures of said plurality having shapes containing a first portion laterally offset from a second portion, and containing a jog connecting the first and second portions to one another; 
 forming rings around the structures over the material; the rings having interior regions with the shapes of the individual structures, and thus having first and second portions laterally offset from one another, and connected to one another through a jog; 
 forming a patterned mask over the rings; the patterned mask having first and second trenches extending through patterned masking material; the patterned mask and the rings together defining a plurality of openings over the material; the openings being arranged in two rows, with one row comprising openings defined within the first trench, and with the other row comprising openings defined within the second trench; and 
 extending said openings into the material to form openings in the material.