Inventor
RHIE HYOUNG-SEUB
KR38 patents
⚠️ This page may combine multiple inventors who share the name “RHIE HYOUNG-SEUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CONVERSANT INTELLECTUAL PROPERTY MAN INC
22 patentsUS9236394B2Jan 12, 2016
Three dimensional nonvolatile memory cell structure with upper body connection
CONVERSANT INTELLECTUAL PROPERTY MAN INC19 citations92
US9214235B2Dec 15, 2015
U-shaped common-body type cell string
CONVERSANT INTELLECTUAL PROPERTY MAN INC16 citations92
US9935110B2Apr 3, 2018
Memory device with manufacturable cylindrical storage node
CONVERSANT INTELLECTUAL PROPERTY MAN INC5 citations84
US9893084B2Feb 13, 2018
U-shaped common-body type cell string
CONVERSANT INTELLECTUAL PROPERTY MAN INC6 citations84
US9595336B2Mar 14, 2017
Vertical gate stacked NAND and row decoder for erase operation
CONVERSANT INTELLECTUAL PROPERTY MAN INC6 citations84
US9202578B2Dec 1, 2015
Vertical gate stacked NAND and row decoder for erase operation
CONVERSANT INTELLECTUAL PROPERTY MAN INC7 citations84
US9025382B2May 5, 2015
Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
CONVERSANT INTELLECTUAL PROPERTY MAN INC11 citations84
USRE48766EOct 5, 2021
Three-dimensional nonvolatile memory cell structure with upper body connection
CONVERSANT INTELLECTUAL PROPERTY MAN INC1 citations73
US10622488B2Apr 14, 2020
NAND flash memory with vertical cell stack structure and method for manufacturing same
CONVERSANT INTELLECTUAL PROPERTY MAN INC2 citations73
USRE47816EJan 14, 2020
Three-dimensional nonvolatile memory cell structure with upper body connection
CONVERSANT INTELLECTUAL PROPERTY MAN INC2 citations73
US9595534B2Mar 14, 2017
U-shaped common-body type cell string
CONVERSANT INTELLECTUAL PROPERTY MAN INC3 citations73
US9202931B2Dec 1, 2015
Structure and method for manufacture of memory device with thin silicon body
CONVERSANT INTELLECTUAL PROPERTY MAN INC4 citations73
US9030879B2May 12, 2015
Method and system for programming non-volatile memory with junctionless cells
CONVERSANT INTELLECTUAL PROPERTY MAN INC3 citations63
US10998048B2May 4, 2021
Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations62
US10460807B2Oct 29, 2019
Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US10074655B2Sep 11, 2018
Memory device with manufacturable cylindrical storage node
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9893076B2Feb 13, 2018
Access transistor of a nonvolatile memory device and method for fabricating same
CONVERSANT INTELLECTUAL PROPERTY MAN INC1 citations52
US9583496B2Feb 28, 2017
Memory device with manufacturable cylindrical storage node
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9384838B2Jul 5, 2016
Split block decoder for a nonvolatile memory device
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9343473B2May 17, 2016
Structure and method for manufacture of memory device with thin silicon body
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9318499B2Apr 19, 2016
Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9252205B2Feb 2, 2016
DRAM memory device with manufacturable capacitor
CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
MOSAID TECH INCORPORATED
5 patentsUS9704580B2Jul 11, 2017
Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices
MOSAID TECH INCORPORATED6 citations84
US11088289B2Aug 10, 2021
NAND flash memory with vertical cell stack structure and method for manufacturing same
MOSAID TECH INCORPORATED1 citations73
US12119411B2Oct 15, 2024
NAND flash memory with vertical cell stack structure and method for manufacturing same
MOSAID TECH INCORPORATED0 citations62
USRE50124ESep 10, 2024
Three-dimensional nonvolatile memory cell structure
MOSAID TECH INCORPORATED0 citations62
US11664463B2May 30, 2023
NAND flash memory with vertical cell stack structure and method for manufacturing same
MOSAID TECH INCORPORATED0 citations62
SAMSUNG ELECTRONICS CO LTD
5 patentsUS7692950B2Apr 6, 2010
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7489003B2Feb 10, 2009
Semiconductor device having a channel extending vertically
SAMSUNG ELECTRONICS CO LTD12 citations84
US7965468B2Jun 21, 2011
Magnetic racetrack memory device including write-back loop
SAMSUNG ELECTRONICS CO LTD3 citations63
US7910435B2Mar 22, 2011
Method of manufacturing a semiconductor device having a channel extending vertically
SAMSUNG ELECTRONICS CO LTD3 citations63
US7494866B2Feb 24, 2009
Semiconductor device and related method of manufacture
SAMSUNG ELECTRONICS CO LTD4 citations58