P

Inventor

RHIE HYOUNG-SEUB

KR38 patents
⚠️ This page may combine multiple inventors who share the name “RHIE HYOUNG-SEUB”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CONVERSANT INTELLECTUAL PROPERTY MAN INC

22 patents
US9236394B2Jan 12, 2016

Three dimensional nonvolatile memory cell structure with upper body connection

CONVERSANT INTELLECTUAL PROPERTY MAN INC19 citations92
US9214235B2Dec 15, 2015

U-shaped common-body type cell string

CONVERSANT INTELLECTUAL PROPERTY MAN INC16 citations92
US9935110B2Apr 3, 2018

Memory device with manufacturable cylindrical storage node

CONVERSANT INTELLECTUAL PROPERTY MAN INC5 citations84
US9893084B2Feb 13, 2018

U-shaped common-body type cell string

CONVERSANT INTELLECTUAL PROPERTY MAN INC6 citations84
US9595336B2Mar 14, 2017

Vertical gate stacked NAND and row decoder for erase operation

CONVERSANT INTELLECTUAL PROPERTY MAN INC6 citations84
US9202578B2Dec 1, 2015

Vertical gate stacked NAND and row decoder for erase operation

CONVERSANT INTELLECTUAL PROPERTY MAN INC7 citations84
US9025382B2May 5, 2015

Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof

CONVERSANT INTELLECTUAL PROPERTY MAN INC11 citations84
USRE48766EOct 5, 2021

Three-dimensional nonvolatile memory cell structure with upper body connection

CONVERSANT INTELLECTUAL PROPERTY MAN INC1 citations73
US10622488B2Apr 14, 2020

NAND flash memory with vertical cell stack structure and method for manufacturing same

CONVERSANT INTELLECTUAL PROPERTY MAN INC2 citations73
USRE47816EJan 14, 2020

Three-dimensional nonvolatile memory cell structure with upper body connection

CONVERSANT INTELLECTUAL PROPERTY MAN INC2 citations73
US9595534B2Mar 14, 2017

U-shaped common-body type cell string

CONVERSANT INTELLECTUAL PROPERTY MAN INC3 citations73
US9202931B2Dec 1, 2015

Structure and method for manufacture of memory device with thin silicon body

CONVERSANT INTELLECTUAL PROPERTY MAN INC4 citations73
US9030879B2May 12, 2015

Method and system for programming non-volatile memory with junctionless cells

CONVERSANT INTELLECTUAL PROPERTY MAN INC3 citations63
US10998048B2May 4, 2021

Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations62
US10460807B2Oct 29, 2019

Integrated erase voltage path for multiple cell substrates in nonvolatile memory devices

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US10074655B2Sep 11, 2018

Memory device with manufacturable cylindrical storage node

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9893076B2Feb 13, 2018

Access transistor of a nonvolatile memory device and method for fabricating same

CONVERSANT INTELLECTUAL PROPERTY MAN INC1 citations52
US9583496B2Feb 28, 2017

Memory device with manufacturable cylindrical storage node

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9384838B2Jul 5, 2016

Split block decoder for a nonvolatile memory device

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9343473B2May 17, 2016

Structure and method for manufacture of memory device with thin silicon body

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9318499B2Apr 19, 2016

Lithography-friendly local read circuit for NAND flash memory devices and manufacturing method thereof

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52
US9252205B2Feb 2, 2016

DRAM memory device with manufacturable capacitor

CONVERSANT INTELLECTUAL PROPERTY MAN INC0 citations52

MOSAID TECH INCORPORATED

5 patents

SAMSUNG ELECTRONICS CO LTD

5 patents

MOSAID TECHNOLOGIES INC

2 patents

CONVERSANT IP MAN INC

2 patents

CONVERSANT INTELLECTUAL PROPERTY MAN INCORPORATED

1 patent

RHIE HYOUNG-SEUB

1 patent