Inventor

MAJHI PRASHANT

US125 patents

⚠️ This page may combine multiple inventors who share the name “MAJHI PRASHANT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MAJHI PRASHANT

INTEL CORP

Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bonding

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

Forming a non-planar transistor having a quantum well channel

Forming a type I heterostructure in a group IV semiconductor

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer

Techniques for forming non-planar resistive memory cells

Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains

Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devices

Self-aligned tunneling pocket in field-effect transistors and processes to form same

Strain-inducing semiconductor regions

Strained thin film transistors

Double selector element for low voltage bipolar memory devices

Backend electrostatic discharge diode apparatus and method of fabricating the same

Low resistance field-effect transistors and methods of manufacturing the same

Vertical switching device with self-aligned contact

Thin film transistors having relatively increased width and shared bitlines

SRAM using 2T-2S

Apparatus with multi-wafer based device and method for forming such

Memory arrays with bonded and shared logic circuitry

Multilayer selector device with low holding voltage

Temperature management of electronic circuitry of electronic devices, memory devices, and computing devices

Heterojunction TFETs employing an oxide semiconductor

RRAM devices and their methods of fabrication

High retention resistive random access memory

Rare earth metal and metal oxide electrode interfacing of oxide memory element in resistive random access memory cell

Stackable thin film memory

Oxide-based three-terminal resistive switching logic devices

Conductivity improvements for III-V semiconductor devices

Deuterium-based passivation of non-planar transistor interfaces

Transistors with ferroelectric gates

Staircase-based metal-insulator-metal (MIM) capacitors

Integrated circuit devices with FinFETs over gate-all-around transistors

Integrated circuit assemblies with stacked compute logic and memory dies

Double-gated ferroelectric field-effect transistor

Antiferroelectric gate dielectric transistors and their methods of fabrication

Thin film tunnel field effect transistors having relatively increased width

1S-1T ferroelectric memory

IC including back-end-of-line (BEOL) transistors with crystalline channel material

MAJHI PRASHANT

Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drains

Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drains

Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

INFINEON TECHNOLOGIES AG

Transistors and methods of manufacture thereof

NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletric

UNIV CALIFORNIA

Tunneling transistor suitable for low voltage operation

RADOSAVLJEVIC MARKO

Conductivity improvements for III-V semiconductor devices

SEMATECH INC

Methods of modulating the work functions of film layers

CHUI CHI ON

Forming a non-planar transistor having a quantum well channel

AHMED KHALED

Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays

MUKHERJEE NILOY

Resistive memory cells and precursors thereof, methods of making the same, and devices including the same