P

Inventor

BRCKA JOZEF

US46 patents
⚠️ This page may combine multiple inventors who share the name “BRCKA JOZEF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

39 patents
US6494998B1Dec 17, 2002

Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element

TOKYO ELECTRON LTD504 citations99
US6446572B1Sep 10, 2002

Embedded plasma source for plasma density improvement

TOKYO ELECTRON LTD311 citations99
US7435454B2Oct 14, 2008

Plasma enhanced atomic layer deposition system and method

TOKYO ELECTRON LTD68 citations98
US7341959B2Mar 11, 2008

Plasma enhanced atomic layer deposition system and method

TOKYO ELECTRON LTD77 citations98
US6523493B1Feb 25, 2003

Ring-shaped high-density plasma source and method

TOKYO ELECTRON LTD93 citations98
US6287435B1Sep 11, 2001

Method and apparatus for ionized physical vapor deposition

TOKYO ELECTRON LTD156 citations96
US6237526B1May 29, 2001

Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma

TOKYO ELECTRON LTD56 citations96
US10672596B2Jun 2, 2020

Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source

TOKYO ELECTRON LTD40 citations95
US6417626B1Jul 9, 2002

Immersed inductively—coupled plasma source

TOKYO ELECTRON LTD64 citations95
US6719886B2Apr 13, 2004

Method and apparatus for ionized physical vapor deposition

TOKYO ELECTRON LTD54 citations94
US7976674B2Jul 12, 2011

Embedded multi-inductive large area plasma source

TOKYO ELECTRON LTD21 citations93
US7867409B2Jan 11, 2011

Control of ion angular distribution function at wafer surface

TOKYO ELECTRON LTD28 citations93
US7651570B2Jan 26, 2010

Solid precursor vaporization system for use in chemical vapor deposition

TOKYO ELECTRON LTD33 citations93
US7132128B2Nov 7, 2006

Method and system for depositing material on a substrate using a solid precursor

TOKYO ELECTRON LTD23 citations93
US6666982B2Dec 23, 2003

Protection of dielectric window in inductively coupled plasma generation

TOKYO ELECTRON LTD37 citations93
US6474258B2Nov 5, 2002

Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma

TOKYO ELECTRON LTD32 citations93
US6652711B2Nov 25, 2003

Inductively-coupled plasma processing system

TOKYO ELECTRON LTD31 citations91
US6853953B2Feb 8, 2005

Method for characterizing the performance of an electrostatic chuck

TOKYO ELECTRON LTD37 citations89
US7771562B2Aug 10, 2010

Etch system with integrated inductive coupling

TOKYO ELECTRON LTD16 citations84
US7556718B2Jul 7, 2009

Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer

TOKYO ELECTRON LTD9 citations84
US7426900B2Sep 23, 2008

Integrated electrostatic inductive coupling for plasma processing

TOKYO ELECTRON LTD18 citations84
US7075771B2Jul 11, 2006

Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system

TOKYO ELECTRON LTD11 citations84
US8028655B2Oct 4, 2011

Plasma processing system with locally-efficient inductive plasma coupling

TOKYO ELECTRON LTD7 citations82
US7810449B2Oct 12, 2010

Plasma processing system with locally-efficient inductive plasma coupling

TOKYO ELECTRON LTD8 citations82
US7854213B2Dec 21, 2010

Modulated gap segmented antenna for inductively-coupled plasma processing system

TOKYO ELECTRON LTD6 citations74
US7673583B2Mar 9, 2010

Locally-efficient inductive plasma coupling for plasma processing system

TOKYO ELECTRON LTD4 citations74
US6946054B2Sep 20, 2005

Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing

TOKYO ELECTRON LTD11 citations74
US7273533B2Sep 25, 2007

Plasma processing system with locally-efficient inductive plasma coupling

TOKYO ELECTRON LTD8 citations72
US10413913B2Sep 17, 2019

Methods and systems for dielectrophoresis (DEP) separation

TOKYO ELECTRON LTD1 citations63
US7566477B2Jul 28, 2009

Method for saturating a carrier gas with precursor vapor

TOKYO ELECTRON LTD3 citations63
US7776748B2Aug 17, 2010

Selective-redeposition structures for calibrating a plasma process

TOKYO ELECTRON LTD3 citations62
US7763551B2Jul 27, 2010

RLSA CVD deposition control using halogen gas for hydrogen scavenging

TOKYO ELECTRON LTD2 citations62
US7591935B2Sep 22, 2009

Enhanced reliability deposition baffle for iPVD

TOKYO ELECTRON LTD2 citations62
US7744735B2Jun 29, 2010

Ionized PVD with sequential deposition and etching

TOKYO ELECTRON LTD6 citations60
US7407324B2Aug 5, 2008

Method and apparatus for monitoring the thickness of a conductive coating

TOKYO ELECTRON LTD0 citations52
US10431425B2Oct 1, 2019

Poly-phased inductively coupled plasma source

TOKYO ELECTRON LTD0 citations42
US7464662B2Dec 16, 2008

Compact, distributed inductive element for large scale inductively-coupled plasma sources

TOKYO ELECTRON LTD0 citations42
US7749398B2Jul 6, 2010

Selective-redeposition sources for calibrating a plasma process

TOKYO ELECTRON LTD0 citations41
US10066293B2Sep 4, 2018

Method of cleaning the filament and reactor's interior in FACVD

TOKYO ELECTRON LTD0 citations39

BRCKA JOZEF

7 patents