Inventor

BAEK IN-GYU

KR64 patents

⚠️ This page may combine multiple inventors who share the name “BAEK IN-GYU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BAEK IN-GYU

SAMSUNG ELECTRONICS CO LTD

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

Resistive memory devices including selected reference memory cells

Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Methods of forming magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems

Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same

Cross-point nonvolatile memory devices using binary metal oxide layer as data storage material layer and methods of fabricating the same

Resistive memory devices including selected reference memory cells

Magnetic tunnel junction and memory device including the same

Resistive memory device, resistive memory system, and operating method thereof

Semiconductor memory device having three-dimensional cross point array

Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same

Resistive memory devices including selected reference memory cells operating responsive to read operations

Resistive memory devices including selected reference memory cells operating responsive to read operations

Resistive memory cells and devices having asymmetrical contacts

Method of manufacturing semiconductor device having transition metal oxide layer and related device

Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element

Nonvolatile memory cells employing a transition metal oxide layers as a data storage material layer and methods of manufacturing the same

Methods of programming non-volatile memory devices including transition metal oxide layer as data storage material layer and devices so operated

Nonvolatile memory devices and methods of manufacturing the same

Magnetic tunnel junction structure having an oxidized buffer layer and method of fabricating the same

Image sensor and an image processing device including the same

Resistive memory device with temperature compensation, resistive memory system, and operating method thereof

Image sensing apparatus

Image sensor and method of fabricating the same

Image sensing apparatus and manufacturing method thereof

Three-dimensional image sensor based on structured light

Semiconductor devices having resistive memory elements

Image sensors

Resistive memory device having asymmetric diode structure

Method of fabricating a variable reistance memory device

Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same

Image sensor and an image processing device including the same

BAEK IN-GYU

Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same

Nonvolatile memory cells having oxygen diffusion barrier layers therein

Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods

Resistive memory cells and devices having asymmetrical contacts

YU HAK-SOO

Semiconductor memory devices

Semiconductor memory device

SAMSUNG ELECCTRONICS CO LTD

Resistive memory cells and devices having asymmetrical contacts

YU HAK SOO

Resistive memory device having voltage level equalizer

PARK CHAN-JIN

Non-volatile memory device having variable resistance element

YOON HONG-SIK

Variable resistance memory devices and methods of programming variable resistance memory devices

PARK HEUNG-KYU

Non-volatile memory devices having resistance changeable elements and related systems and methods

YIM EUN-KYUNG

Nonvolatile memory devices and methods of forming the same

SHIM HYUN-JUN

Resistive random access memory

SONG SEONG-HO

Semiconductor devices with vertical structure including data storage layer or pattern

OH JEONG-HOON

Semiconductor devices and methods of driving the same

PARK CHUL WOO

Resistive memory devices, initialization methods, and electronic devices incorporating same