Inventor
FURUMIYA MASAYUKI
JP54 patents
⚠️ This page may combine multiple inventors who share the name “FURUMIYA MASAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC ELECTRONICS CORP
17 patentsUS6639293B2Oct 28, 2003
Solid-state imaging device
NEC ELECTRONICS CORP32 citations93
US6879234B2Apr 12, 2005
Semiconductor integrated circuit
NEC ELECTRONICS CORP29 citations92
US7414506B2Aug 19, 2008
Semiconductor integrated circuit and fabrication method thereof
NEC ELECTRONICS CORP12 citations84
US7256456B2Aug 14, 2007
SOI substrate and semiconductor integrated circuit device
NEC ELECTRONICS CORP13 citations84
US7091576B2Aug 15, 2006
Inductor for semiconductor integrated circuit and method of fabricating the same
NEC ELECTRONICS CORP14 citations84
US7053165B2May 30, 2006
Semiconductor integrated circuit including an inductor and method of manufacturing the same
NEC ELECTRONICS CORP14 citations84
US6744466B1Jun 1, 2004
Method of driving solid-state image sensor
NEC ELECTRONICS CORP15 citations84
US7663207B2Feb 16, 2010
Semiconductor device
NEC ELECTRONICS CORP7 citations74
US6825879B1Nov 30, 2004
Solid-state image sensing device and method of driving the same
NEC ELECTRONICS CORP8 citations74
US7705422B2Apr 27, 2010
Semiconductor device including metal-insulator-metal capacitor arrangement
NEC ELECTRONICS CORP3 citations63
US7432170B2Oct 7, 2008
Semiconductor device and fabrication method thereof
NEC ELECTRONICS CORP5 citations63
US7361845B2Apr 22, 2008
Wiring line for high frequency
NEC ELECTRONICS CORP4 citations63
US7288826B2Oct 30, 2007
Semiconductor integrated circuit device
NEC ELECTRONICS CORP3 citations63
US7095072B2Aug 22, 2006
Semiconductor device with wiring layers forming a capacitor
NEC ELECTRONICS CORP6 citations63
US6760072B1Jul 6, 2004
Multi-phase readout of signal charge to vertical CCD
NEC ELECTRONICS CORP2 citations63
US6667499B1Dec 23, 2003
Solid-state image sensing device and method of manufacturing the same
NEC ELECTRONICS CORP6 citations63
US7432551B2Oct 7, 2008
SOI semiconductor device including a guard ring region
NEC ELECTRONICS CORP1 citations52
NEC CORP
15 patentsUS5844290ADec 1, 1998
Solid state image pick-up device and method for manufacturing the same
NEC CORP124 citations98
US5858812AJan 12, 1999
Method for fabricating interline-transfer CCD image sensor
NEC CORP30 citations93
US5637893AJun 10, 1997
Interline-transfer CCD image sensor and method for fabricating the same
NEC CORP19 citations93
US6316814B1Nov 13, 2001
Solid imaging device
NEC CORP53 citations92
US6525355B2Feb 25, 2003
Solid-state image sensor provided with divided photoelectric conversion part
NEC CORP15 citations84
US6252285B1Jun 26, 2001
Efficient inspection of light-gathering rate of microlens in solid state imaging device
NEC CORP15 citations84
US6097433AAug 1, 2000
Solid state imaging apparatus having a plurality of metal wirings for supplying driving pulses to transfer electrodes of vertical CCD registers
NEC CORP17 citations82
US6465819B2Oct 15, 2002
Solid state imaging apparatus with transistors having different gate insulating film thickness and manufacturing method for the same
NEC CORP11 citations74
US6333525B1Dec 25, 2001
Charge transfer apparatus and manufacture method thereof
NEC CORP12 citations74
US5742081AApr 21, 1998
Charge transfer image pickup device
NEC CORP14 citations74
US5323034AJun 21, 1994
Charge transfer image pick-up device
NEC CORP8 citations74
US6518605B1Feb 11, 2003
Solid state imaging pickup device and method for manufacturing the same
NEC CORP8 citations73
US6441853B1Aug 27, 2002
Solid-state image sensor having vertical transfer electrodes protected from short circuiting
NEC CORP5 citations63
US5804843ASep 8, 1998
Solid state pickup device for suppressing smear signals
NEC CORP5 citations62
US6177692B1Jan 23, 2001
Solid-state image sensor output MOSFET circuit
NEC CORP0 citations52
RENESAS ELECTRONICS CORP
14 patentsUS8358009B2Jan 22, 2013
Semiconductor device
RENESAS ELECTRONICS CORP15 citations93
US7973383B2Jul 5, 2011
Semiconductor integrated circuit device having a decoupling capacitor
RENESAS ELECTRONICS CORP7 citations84
US8604617B2Dec 10, 2013
Semiconductor device
RENESAS ELECTRONICS CORP5 citations79
US8350357B2Jan 8, 2013
Semiconductor device including an inductor that is inductively coupled to another inductor
RENESAS ELECTRONICS CORP4 citations63
US8039924B2Oct 18, 2011
Semiconductor device including capacitor element provided above wiring layer that includes wiring with an upper surface having protruding portion
RENESAS ELECTRONICS CORP4 citations63
US8013385B2Sep 6, 2011
Semiconductor device
RENESAS ELECTRONICS CORP2 citations63
US8373251B2Feb 12, 2013
Semiconductor device
RENESAS ELECTRONICS CORP4 citations61
US9123571B2Sep 1, 2015
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US8841771B2Sep 23, 2014
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US8633037B2Jan 21, 2014
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US8378454B2Feb 19, 2013
Semiconductor device including metal-insulator-metal capacitor arrangement
RENESAS ELECTRONICS CORP0 citations52
US8357990B2Jan 22, 2013
Semiconductor device
RENESAS ELECTRONICS CORP0 citations52
US7986026B2Jul 26, 2011
Semiconductor device including metal-insulator-metal capacitor arrangement
RENESAS ELECTRONICS CORP0 citations52
US7935549B2May 3, 2011
Seminconductor device
RENESAS ELECTRONICS CORP0 citations52
FURUMIYA MASAYUKI
3 patentsUCHIDA SHINICHI
1 patentShowing the top 50 of 54 patents by PatentIndex Score.