Solid imaging device

Abstract

A solid imaging device having a high sensitivity includes a photoelectric conversion region, a light shielding film having an aperture disposed above the photoelectric conversion region, and a plurality of wiring layers and wherein a portion of one wiring layer protrudes from the edge of the aperture, when viewed from the top of the aperture, so as to shield the light incident to the peripheral area of the photoelectric conversion region for defining the light admitting region.

What is claimed is:  
     
       1. A solid imaging device comprising: 
       a photoelectric conversion region within a separating film on a substrate and having a cross-section width;  
       a light shielding film having an aperture above said photoelectric conversion region;  
       a plurality of wiring layers disposed in an interlayer insulation film at intermediate positions between said light shielding layer and said photoelectric conversion region;  
       wherein, a portion of said wiring layer is disposed protruding inside of said light shielding layer when viewed from the top of the aperture so as to form a shield aperture shielding the incident light for defining the light admitting region by shielding the incident light admitted to the peripheral area of the photoelectric conversion region, the cross-section width of the shield aperture being less than the cross-section width of the photoelectric conversion region.  
     
     
       2. A solid imaging device according to claim  1 , wherein said wiring layer is disposed so as to surround said photoelectric conversion region. 
     
     
       3. A solid imaging device according to claim  2 , wherein said wiring layer is disposed so as to intermittently surround said photoelectric conversion region. 
     
     
       4. A solid imaging device according to claim  1 , wherein said wiring layer is disposed so as to cover at least a portion of said photoelectric conversion region. 
     
     
       5. A solid imaging device according to claim  1 , wherein said plurality of said wiring layers are disposed at different intervals from said photoelectric conversion area. 
     
     
       6. A solid imaging device according to claim  3 , wherein said plurality of said wiring layers are disposed so as to surround said photoelectric conversion area in a combination of two or more. 
     
     
       7. A solid imaging device according to claim  1 , wherein said wiring layer is made of metal or polysilicon. 
     
     
       8. A solid imaging device according to claim  1 , wherein the solid imaging device comprises a rest drain region and a reset gate electrode, 
       wherein said wiring layer is selected from the group consisting of a Vdd layer connected to said reset drain region, a reset gate wiring layer connected to said reset gate electrode, a reset gate, an XY address wiring layer, and an output wiring layer.  
     
     
       9. A solid imaging device according to claim  1 , wherein said solid imaging device includes MOS sensors and CCD sensors. 
     
     
       10. A solid image device according to claim  1 , wherein the shield aperture cross-section width is greater than a cross-section width of the aperture of the light shielding film.