P

Inventor

LIM YOUNG-HO

KR103 patents
⚠️ This page may combine multiple inventors who share the name “LIM YOUNG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

45 patents
US6717857B2Apr 6, 2004

Non-volatile semiconductor memory device with cache function and program, read, and page copy-back operations thereof

SAMSUNG ELECTRONICS CO LTD159 citations99
US5671178ASep 23, 1997

Erase verifying circuit for a nonvolatile semiconductor memory with column redundancy

SAMSUNG ELECTRONICS CO LTD234 citations99
US7468907B2Dec 23, 2008

Programming method for flash memory capable of compensating reduction of read margin between states due to hot temperature stress

SAMSUNG ELECTRONICS CO LTD72 citations98
US6804150B2Oct 12, 2004

Non-volatile semiconductor memory device with improved program inhibition characteristics and method of programming the same

SAMSUNG ELECTRONICS CO LTD94 citations98
US6735116B2May 11, 2004

NAND-type flash memory device with multi-page program, multi-page read, multi-block erase operations

SAMSUNG ELECTRONICS CO LTD86 citations98
US6490199B2Dec 3, 2002

Sense amplifier circuit for a flash memory device

SAMSUNG ELECTRONICS CO LTD131 citations98
US5848009ADec 8, 1998

Integrated circuit memory devices that map nondefective memory cell blocks into continuous addresses

SAMSUNG ELECTRONICS CO LTD129 citations98
US6469933B2Oct 22, 2002

Flash memory device capable of preventing program disturb and method for programming the same

SAMSUNG ELECTRONICS CO LTD121 citations97
US7379333B2May 27, 2008

Page-buffer and non-volatile semiconductor memory including page buffer

SAMSUNG ELECTRONICS CO LTD34 citations96
US7298648B2Nov 20, 2007

Page buffer and multi-state nonvolatile memory device including the same

SAMSUNG ELECTRONICS CO LTD39 citations96
US6587375B2Jul 1, 2003

Row decoder for a nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD57 citations96
US6529413B2Mar 4, 2003

Method for preventing over-erasing of memory cells and flash memory device using the same

SAMSUNG ELECTRONICS CO LTD63 citations96
US5568420AOct 22, 1996

Nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD55 citations96
US5398213AMar 14, 1995

Access time speed-up circuit for a semiconductor memory device

SAMSUNG ELECTRONICS CO LTD423 citations95
US7773419B2Aug 10, 2010

NOR flash memory device with a serial sensing operation and method of sensing data bits in a NOR flash memory device

SAMSUNG ELECTRONICS CO LTD21 citations93
US7548457B2Jun 16, 2009

Multi-bit nonvolatile memory device and related programming method

SAMSUNG ELECTRONICS CO LTD33 citations93
US7457168B2Nov 25, 2008

Non-volatile memory device and associated method of erasure

SAMSUNG ELECTRONICS CO LTD18 citations93
US7433235B2Oct 7, 2008

Bias circuits and methods for enhanced reliability of flash memory device

SAMSUNG ELECTRONICS CO LTD15 citations93
US7403429B2Jul 22, 2008

Method of erasing data with improving reliability in a nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD45 citations93
US7403422B2Jul 22, 2008

NAND flash memory device and programming method

SAMSUNG ELECTRONICS CO LTD41 citations93
US7397706B2Jul 8, 2008

Methods of erasing flash memory devices by applying wordline bias voltages having multiple levels and related flash memory devices

SAMSUNG ELECTRONICS CO LTD37 citations93
US7313020B2Dec 25, 2007

Multi-level nonvolatile semiconductor memory device and method for reading the same

SAMSUNG ELECTRONICS CO LTD23 citations93
US7272049B2Sep 18, 2007

Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells

SAMSUNG ELECTRONICS CO LTD48 citations93
US7072238B2Jul 4, 2006

Semiconductor device capable of generating ripple-free voltage internally

SAMSUNG ELECTRONICS CO LTD35 citations93
US6781904B2Aug 24, 2004

Low-voltage semiconductor memory device

SAMSUNG ELECTRONICS CO LTD38 citations93
US6738290B2May 18, 2004

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD22 citations93
US6678191B2Jan 13, 2004

Semiconductor memory device having memory cell arrays capable of accomplishing random access

SAMSUNG ELECTRONICS CO LTD52 citations93
US6654290B2Nov 25, 2003

Flash memory device with cell current measuring scheme using write driver

SAMSUNG ELECTRONICS CO LTD30 citations93
US6611460B2Aug 26, 2003

Nonvolatile semiconductor memory device and programming method thereof

SAMSUNG ELECTRONICS CO LTD26 citations93
US6009040ADec 28, 1999

Apparatus and methods for controlling sensing time in a memory device

SAMSUNG ELECTRONICS CO LTD59 citations93
US5625590AApr 29, 1997

Nonvolatile semiconductor memory

SAMSUNG ELECTRONICS CO LTD98 citations93
US7561467B2Jul 14, 2009

Flash memory device using program data cache and programming method thereof

SAMSUNG ELECTRONICS CO LTD22 citations92
US6813214B2Nov 2, 2004

Non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD33 citations92
US6704239B2Mar 9, 2004

Non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD32 citations92
US6545910B2Apr 8, 2003

Non-volatile semiconductor memory device having word line defect check circuit

SAMSUNG ELECTRONICS CO LTD26 citations92
US6542406B2Apr 1, 2003

Row decoder of a NOR-type flash memory device

SAMSUNG ELECTRONICS CO LTD24 citations92
US6108259AAug 22, 2000

Nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD24 citations92
US6084800AJul 4, 2000

Circuit of boosting a voltage for use in a flash memory device

SAMSUNG ELECTRONICS CO LTD35 citations92
US5661682AAug 26, 1997

Nonvolatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD18 citations92
US8046525B2Oct 25, 2011

Nonvolatile semiconductor memory device with advanced multi-page program operation

SAMSUNG ELECTRONICS CO LTD7 citations84
US8045380B2Oct 25, 2011

Flash memory device and program method of flash memory device using different voltages

SAMSUNG ELECTRONICS CO LTD7 citations84
US8023323B2Sep 20, 2011

Non-volatile memory device having monitoring memory cell and related method of driving using variable read voltage

SAMSUNG ELECTRONICS CO LTD17 citations84
US7885111B2Feb 8, 2011

Flash memory device and method for providing initialization data

SAMSUNG ELECTRONICS CO LTD12 citations84
US7852682B2Dec 14, 2010

Flash memory device and program method of flash memory device using different voltages

SAMSUNG ELECTRONICS CO LTD11 citations84
US7804712B2Sep 28, 2010

Flash memory device and program recovery method thereof

SAMSUNG ELECTRONICS CO LTD14 citations84

KIM TAE-YOUNG

1 patent

SAMSUNG ELECTRONICS COT LTD

1 patent

DAEWOONG ELECTRIC IND CO LTD

1 patent

LEE SUNG-SOO

1 patent

KIM MOO-SUNG

1 patent

Showing the top 50 of 103 patents by PatentIndex Score.