Inventor
HOKE WILLIAM E
US28 patents
⚠️ This page may combine multiple inventors who share the name “HOKE WILLIAM E”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RAYTHEON CO
22 patentsUS5060030AOct 22, 1991
Pseudomorphic HEMT having strained compensation layer
RAYTHEON CO297 citations99
US6797994B1Sep 28, 2004
Double recessed transistor
RAYTHEON CO145 citations96
US5077875AJan 7, 1992
Reactor vessel for the growth of heterojunction devices
RAYTHEON CO100 citations96
US6573129B2Jun 3, 2003
Gate electrode formation in double-recessed transistor by two-step etching
RAYTHEON CO156 citations95
US9419125B1Aug 16, 2016
Doped barrier layers in epitaxial group III nitrides
RAYTHEON CO24 citations92
US7968865B2Jun 28, 2011
Boron aluminum nitride diamond heterostructure
RAYTHEON CO21 citations92
US6620662B2Sep 16, 2003
Double recessed transistor
RAYTHEON CO31 citations90
US6489639B1Dec 3, 2002
High electron mobility transistor
RAYTHEON CO39 citations90
US6271547B1Aug 7, 2001
Double recessed transistor with resistive layer
RAYTHEON CO20 citations89
US5448084ASep 5, 1995
Field effect transistors on spinel substrates
RAYTHEON CO24 citations89
US4804638AFeb 14, 1989
Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
RAYTHEON CO28 citations89
US4904337AFeb 27, 1990
Photo-enhanced pyrolytic MOCVD growth of group II-VI materials
RAYTHEON CO24 citations88
US4568397AFeb 4, 1986
Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
RAYTHEON CO37 citations86
US8823146B1Sep 2, 2014
Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
RAYTHEON CO18 citations84
US4886683ADec 12, 1989
Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
RAYTHEON CO23 citations80
US7226850B2Jun 5, 2007
Gallium nitride high electron mobility transistor structure
RAYTHEON CO10 citations79
US6835969B1Dec 28, 2004
Split-channel high electron mobility transistor (HEMT) device
RAYTHEON CO15 citations79
US7557378B2Jul 7, 2009
Boron aluminum nitride diamond heterostructure
RAYTHEON CO5 citations73
US6818928B2Nov 16, 2004
Quaternary-ternary semiconductor devices
RAYTHEON CO7 citations69
US7776152B2Aug 17, 2010
Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
RAYTHEON CO2 citations62
US6368983B1Apr 9, 2002
Multi-layer wafer fabrication
RAYTHEON CO3 citations56
US10622447B2Apr 14, 2020
Group III-nitride structure having successively reduced crystallographic dislocation density regions
RAYTHEON CO0 citations37