Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices

Abstract

A semiconductor structure having a silicon substrate having a <111> crystallographic orientation, an insulating layer disposed over a first portion of the silicon substrate, a silicon layer having a <100> orientation disposed over the insulating layer, and a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or column II-VI semiconductor layer being in direct contact with a second portion of the silicon substrate. A column III-nitride is disposed on the surface of the third portion of the substrate.

What is claimed is: 
     
       1. A semiconductor structure comprising:
 a silicon substrate having a <111> crystallographic orientation; 
 an insulating layer disposed over a first portion of the silicon substrate; 
 a silicon layer having a <100> orientation disposed over the insulating layer, 
 a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or the column II-VI semiconductor layer being in a direct contact with a second portion of the silicon substrate. 
 
     
     
       2. The semiconductor structure recited in  claim 1  where the non-nitride device is a column III-X device, where X is a non-nitride element. 
     
     
       3. The semiconductor device recite in  claim 2  wherein the column III-X device is a column III-As, column III-P, column III-Sb, or column III alloys of As, P, Sb device. 
     
     
       4. The semiconductor structure recited in  claim 1  including a III-N layer in direct contact with a third portion of the substrate, where N is nitrogen. 
     
     
       5. The semiconductor structure recited in  claim 2  including a III-N layer in direct contact with a third portion of the substrate, where N is nitrogen. 
     
     
       6. The semiconductor structure recited in  claim 3  including a III-N layer in direct contact with a third portion of the substrate, where N is nitrogen. 
     
     
       7. A semiconductor structure comprising:
 a silicon substrate having a <111> crystallographic orientation; 
 an insulating layer disposed over a first portion of the silicon substrate; 
 a silicon layer having a <100> orientation disposed over the insulating layer, 
 a non-nitride column III-V semiconductor layer or column II-VI semiconductor layer having the same <111> crystallographic orientation as the silicon substrate, the non-nitride column III-V semiconductor layer or the column II-VI semiconductor layer being in direct contact with a second portion of the silicon substrate, the column III-V semiconductor layer being column III-As, column III-P, column III-Sb, or column III alloys of As, P, Sb device and the column II-VI semiconductor being a column II-O, column II-S, column II-Se, column II-Te or column II alloys of O, S, Se, and Te. 
 
     
     
       8. The semiconductor structure recited in  claim 7  including a III-N layer in direct contact with a third portion of the substrate, where N is nitrogen. 
     
     
       9. The semiconductor structure recited in  claim 7  wherein the silicon layer has a transistor device formed therein. 
     
     
       10. The semiconductor structure recited in  claim 9  wherein the silicon layer has CMOS transistor devices formed therein. 
     
     
       11. The semiconductor structure recited in  claim 10  wherein the column III-V semiconductor layer having formed therein an InP or GaAs or InSb device. 
     
     
       12. The semiconductor structure recited in  claim 1  wherein the column III-V semiconductor layer has formed therein a InP or GaAs or InSb device. 
     
     
       13. The semiconductor structure recited in  claim 1  wherein the column II-VI semiconductor layer is CdTe, HgCdTe or ZnO. 
     
     
       14. The semiconductor structure recited in  claim 10  wherein the column II-VI semiconductor layer is CdTe, HgCdTe or ZnO.