Inventor · disambiguated record
William E. Hoke
Also filed as: HOKE WILLIAM E
28 granted patents·8 pending applications·1,090 citations·filing 1984–2017
97Inventor score
Top patents by PatentIndex Score
36 records- 0197US5060030APseudomorphic HEMT having strained compensation layerRAYTHEON CO·Filed 1990·Granted Oct 22, 1991·297 cites·14 claims
- 0295US9419125B1Doped barrier layers in epitaxial group III nitridesRAYTHEON CO·Filed 2015·Granted Aug 16, 2016·24 cites·22 claims
- 0395US6797994B1Double recessed transistorRAYTHEON CO·Filed 2000·Granted Sep 28, 2004·145 cites·15 claims
- 0494US8823146B1Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devicesRAYTHEON CO·Filed 2013·Granted Sep 2, 2014·18 cites·14 claims
- 0594US6573129B2Gate electrode formation in double-recessed transistor by two-step etchingRAYTHEON CO·Filed 2001·Granted Jun 3, 2003·156 cites·7 claims
- 0693US8212294B2Structure having silicon CMOS transistors with column III-V transistors on a common substrateHOKE WILLIAM E·Filed 2010·Granted Jul 3, 2012·36 cites·8 claims
- 0793US5077875AReactor vessel for the growth of heterojunction devicesRAYTHEON CO·Filed 1991·Granted Jan 7, 1992·100 cites·15 claims
- 0892US7968865B2Boron aluminum nitride diamond heterostructureRAYTHEON CO·Filed 2009·Granted Jun 28, 2011·21 cites·6 claims
- 0990US8772786B2Gallium nitride devices having low ohmic contact resistanceTABATABAIE KAMAL·Filed 2012·Granted Jul 8, 2014·17 cites·4 claims
- 1083US6620662B2Double recessed transistorRAYTHEON CO·Filed 2001·Granted Sep 16, 2003·31 cites·33 claims
- 1183US6489639B1High electron mobility transistorRAYTHEON CO·Filed 2000·Granted Dec 3, 2002·39 cites·31 claims
- 1280US7226850B2Gallium nitride high electron mobility transistor structureRAYTHEON CO·Filed 2005·Granted Jun 5, 2007·10 cites·3 claims
- 1378US4804638AMetalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformityRAYTHEON CO·Filed 1988·Granted Feb 14, 1989·28 cites·59 claims
- 1475US7776152B2Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growthRAYTHEON CO·Filed 2006·Granted Aug 17, 2010·2 cites·24 claims
- 1575US7557378B2Boron aluminum nitride diamond heterostructureRAYTHEON CO·Filed 2006·Granted Jul 7, 2009·5 cites·5 claims
- 1674US8268707B2Gallium nitride for liquid crystal electrodesRESLER DANIEL P·Filed 2010·Granted Sep 18, 2012·4 cites·8 claims
- 1772US4904337APhoto-enhanced pyrolytic MOCVD growth of group II-VI materialsRAYTHEON CO·Filed 1988·Granted Feb 27, 1990·24 cites·4 claims
- 1871US8575666B2Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductorLAROCHE JEFFREY R·Filed 2011·Granted Nov 5, 2013·4 cites·10 claims
- 1969US6835969B1Split-channel high electron mobility transistor (HEMT) deviceRAYTHEON CO·Filed 2003·Granted Dec 28, 2004·15 cites·19 claims
- 2068US4568397AMetalorganic vapor phase epitaxial growth of group II-VI semiconductor materialsRAYTHEON CO·Filed 1984·Granted Feb 4, 1986·37 cites·6 claims
- 2164US6271547B1Double recessed transistor with resistive layerRAYTHEON CO·Filed 1999·Granted Aug 7, 2001·20 cites·2 claims
- 2261US5448084AField effect transistors on spinel substratesRAYTHEON CO·Filed 1991·Granted Sep 5, 1995·24 cites·14 claims
- 2356US6818928B2Quaternary-ternary semiconductor devicesRAYTHEON CO·Filed 2002·Granted Nov 16, 2004·7 cites·6 claims
- 2455US4886683ALow temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materialsRAYTHEON CO·Filed 1986·Granted Dec 12, 1989·23 cites·44 claims
- 2551US2013161699A1Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materialsRAYTHEON CO·Filed 2013·Application pending·0 cites
- 2647US8698200B2Gallium nitride for liquid crystal electrodesRESLER DANIEL P·Filed 2012·Granted Apr 15, 2014·0 cites·11 claims
- 2744US2012261721A1Semiconductor structures having nucleation layer to prevent interfacial charge for column iii-v materials on column iv or column iv-iv materialsHOKE WILLIAM E·Filed 2011·Application pending·0 cites
- 2843US2015059640A1Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windowsRAYTHEON CO·Filed 2013·Application pending·0 cites
- 2940US10622447B2Group III-nitride structure having successively reduced crystallographic dislocation density regionsRAYTHEON CO·Filed 2017·Granted Apr 14, 2020·0 cites·24 claims
- 3040US2014183545A1Polarization effect carrier generating device structures having compensation doping to reduce leakage currentRAYTHEON CO·Filed 2013·Application pending·0 cites
- 3140US2007164313A1Gallium nitride high electron mobility transistor structureHOKE WILLIAM E·Filed 2007·Application pending·0 cites
- 3238US2007052048A1Strain compensated high electron mobility transistorRAYTHEON CO·Filed 2005·Application pending·0 cites
- 3338US2008258135A1Semiconductor structure having plural back-barrier layers for improved carrier confinementHOKE WILLIAM E·Filed 2007·Application pending·0 cites
- 3435US9293379B2Semiconductor structure with layers having different hydrogen contentsCHUMBES EDUARDO M·Filed 2009·Granted Mar 22, 2016·0 cites·8 claims
- 3534US2012300168A1Optically transparent conductorsHOKE WILLIAM E·Filed 2011·Application pending·0 cites
- 3628US6368983B1Multi-layer wafer fabricationRAYTHEON CO·Filed 1999·Granted Apr 9, 2002·3 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →