US2007164313A1PendingUtilityA1
Gallium nitride high electron mobility transistor structure
Individually held — no corporate assignee on recordPriority: May 19, 2005Filed: Mar 30, 2007Published: Jul 19, 2007
Est. expiryMay 19, 2025(expired)· nominal 20-yr term from priority
H10D 30/4755H10D 62/8503H10D 30/4738H10P 14/3216
40
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Claims
Abstract
A semiconductor structure, comprising: a substrate; a first aluminum nitride (AlN) layer having an aluminum/reactive nitride (Al/N) flux ratio less than 1 disposed on the substrate; and a second AlN layer having an Al/reactive N flux ratio greater than 1 disposed on the first AlN layer. The substrate is a compound of silicon wherein the first AlN layer is substantially free of silicon.
Claims
exact text as granted — not AI-modified1 . A semiconductor structure, comprising: a silicon substrate; an AlN on the silicon substrate; and wherein portions of the AlN layer in contact with the silicon substrate are substantially free of silicon; a graded AlGaN layer on the AlN layer; a GaN layer on the AlGaN layer; and including an AlGaN layer on the GaN layer.
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