Inventor
HUANG GIN-CHEN
TW30 patents
⚠️ This page may combine multiple inventors who share the name “HUANG GIN-CHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS9443769B2Sep 13, 2016
Wrap-around contact
TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US10651091B2May 12, 2020
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941367B2Apr 10, 2018
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9780214B2Oct 3, 2017
Semiconductor device including Fin- FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10333001B2Jun 25, 2019
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9870956B2Jan 16, 2018
FinFETs with nitride liners and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9620628B1Apr 11, 2017
Methods of forming contact feature
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11694889B2Jul 4, 2023
Chemical mechanical polishing cleaning system with temperature control for defect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations68
US9929272B2Mar 27, 2018
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9882029B2Jan 30, 2018
Semiconductor device including Fin-FET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9443964B2Sep 13, 2016
Fin structure of FinFet
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11854898B2Dec 26, 2023
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11718812B2Aug 8, 2023
Post-CMP cleaning composition for germanium-containing substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362000B2Jun 14, 2022
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12543524B2Feb 3, 2026
Chemical mechanical polishing cleaning system with temperature control for defect reduction
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US10269935B2Apr 23, 2019
Semiconductor device including Fin-PET and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10115597B2Oct 30, 2018
Self-aligned dual-metal silicide and germanide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9607826B2Mar 28, 2017
Semiconductor device manufacturing methods and methods of forming insulating material layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9559182B2Jan 31, 2017
Self-aligned dual-metal silicide and germanide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9368446B2Jun 14, 2016
Self aligned contact formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9093530B2Jul 28, 2015
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG1,300 citations99
US9214556B2Dec 15, 2015
Self-aligned dual-metal silicide and germanide formation
TAIWAN SEMICONDUCTOR MFG23 citations92
US8921136B2Dec 30, 2014
Self aligned contact formation
TAIWAN SEMICONDUCTOR MFG7 citations84
US8940597B2Jan 27, 2015
In-situ metal gate recess process for self-aligned contact application
TAIWAN SEMICONDUCTOR MFG1 citations52
HUANG GIN-CHEN
3 patentsUS9105661B2Aug 11, 2015
Fin field effect transistor gate oxide
HUANG GIN-CHEN12 citations82
US9006802B2Apr 14, 2015
Semiconductor device manufacturing methods and methods of forming insulating material layers
HUANG GIN-CHEN3 citations61
US8853052B2Oct 7, 2014
Method of manufacturing a semiconductor device
HUANG GIN-CHEN0 citations40