P

Inventor

NISHIMURA TAKEYOSHI

JP64 patents
⚠️ This page may combine multiple inventors who share the name “NISHIMURA TAKEYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

FUJI ELECTRIC CO LTD

42 patents
US5757046AMay 26, 1998

MOS type semiconductor device

FUJI ELECTRIC CO LTD79 citations96
US5723890AMar 3, 1998

MOS type semiconductor device

FUJI ELECTRIC CO LTD74 citations96
US6548865B2Apr 15, 2003

High breakdown voltage MOS type semiconductor apparatus

FUJI ELECTRIC CO LTD18 citations93
US6246092B1Jun 12, 2001

High breakdown voltage MOS semiconductor apparatus

FUJI ELECTRIC CO LTD41 citations93
US5097302AMar 17, 1992

Semiconductor device having current detection capability

FUJI ELECTRIC CO LTD40 citations93
US5721148AFeb 24, 1998

Method for manufacturing MOS type semiconductor device

FUJI ELECTRIC CO LTD49 citations92
US5191395AMar 2, 1993

Mos type semiconductor device with means to prevent parasitic bipolar transistor

FUJI ELECTRIC CO LTD38 citations92
US9461030B2Oct 4, 2016

Semiconductor device and method for producing the same

FUJI ELECTRIC CO LTD8 citations84
US8952450B2Feb 10, 2015

Semiconductor device and the method of manufacturing the same

FUJI ELECTRIC CO LTD4 citations84
US5043779AAug 27, 1991

Metal oxide semiconductor device with well region

FUJI ELECTRIC CO LTD20 citations82
US9818845B2Nov 14, 2017

MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor device

FUJI ELECTRIC CO LTD8 citations81
US9293564B2Mar 22, 2016

Semiconductor device manufacturing method

FUJI ELECTRIC CO LTD8 citations81
US5912491AJun 15, 1999

MOS device

FUJI ELECTRIC CO LTD6 citations74
US5306937AApr 26, 1994

Semiconductor device having a built-in current-sensing diode

FUJI ELECTRIC CO LTD18 citations74
US5291050AMar 1, 1994

MOS device having reduced gate-to-drain capacitance

FUJI ELECTRIC CO LTD17 citations74
US11600722B2Mar 7, 2023

Semiconductor element and semiconductor device

FUJI ELECTRIC CO LTD2 citations73
US9935169B2Apr 3, 2018

Semiconductor device and method of manufacturing the same

FUJI ELECTRIC CO LTD3 citations73
US9905652B2Feb 27, 2018

Semiconductor device having varying wiring resistance

FUJI ELECTRIC CO LTD2 citations73
US9741843B2Aug 22, 2017

Semiconductor device

FUJI ELECTRIC CO LTD2 citations73
US9548294B2Jan 17, 2017

Semiconductor device with temperature-detecting diode

FUJI ELECTRIC CO LTD5 citations73
US9601334B2Mar 21, 2017

Semiconductor device and the method of manufacturing the same

FUJI ELECTRIC CO LTD1 citations63
US9349826B2May 24, 2016

Semiconductor device and the method of manufacturing the same

FUJI ELECTRIC CO LTD1 citations63
US5990518ANov 23, 1999

MOS device

FUJI ELECTRIC CO LTD4 citations63
US11545460B2Jan 3, 2023

Semiconductor device and method for manufacturing semiconductor device having first and second wires in different diameter

FUJI ELECTRIC CO LTD0 citations62
US10943997B2Mar 9, 2021

Semiconductor device and method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations62
US10593787B2Mar 17, 2020

Semiconductor device and method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD1 citations62
US10439061B2Oct 8, 2019

Semiconductor device

FUJI ELECTRIC CO LTD1 citations62
US10396065B2Aug 27, 2019

Semiconductor device having a temperature-detecting diode

FUJI ELECTRIC CO LTD1 citations62
US5869372AFeb 9, 1999

Method of manufacturing a power semiconductor device

FUJI ELECTRIC CO LTD6 citations61
US11699727B2Jul 11, 2023

Semiconductor device

FUJI ELECTRIC CO LTD0 citations60
US11469318B2Oct 11, 2022

Superjunction semiconductor device having parallel PN structure with column structure and method of manufacturing the same

FUJI ELECTRIC CO LTD1 citations59
US12414316B2Sep 9, 2025

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US11322582B2May 3, 2022

Semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US11282946B2Mar 22, 2022

Semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US10026812B2Jul 17, 2018

Semiconductor device and method of manufacturing the same

FUJI ELECTRIC CO LTD0 citations52
US9905556B1Feb 27, 2018

Semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US9741805B2Aug 22, 2017

Semiconductor device and method for manufacturing the semiconductor device

FUJI ELECTRIC CO LTD0 citations52
US9601440B2Mar 21, 2017

Method for manufacturing semiconductor device and exposure mask used in the same method

FUJI ELECTRIC CO LTD0 citations52
US9608057B2Mar 28, 2017

Semiconductor device and method for manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US9331194B2May 3, 2016

Semiconductor device and method for manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations51
US10910361B2Feb 2, 2021

Semiconductor element and semiconductor device

FUJI ELECTRIC CO LTD0 citations50
US10453917B2Oct 22, 2019

Method of manufacturing semiconductor device

FUJI ELECTRIC CO LTD0 citations50

FUJI ELEC DEVICE TECH CO LTD

2 patents

FUJI ELECTRIC SYSTEMS CO LTD

2 patents

NISHIMURA TAKEYOSHI

1 patent

UEHARA HIROYASU

1 patent

NIIMURA YASUSHI

1 patent

RICOH CO LTD

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.