Inventor
MINUTILLO NICHOLAS G
US12 patents
Patents
12 patentsUS11923410B2Mar 5, 2024
Transistor with isolation below source and drain
INTEL CORP4 citations75
US11171207B2Nov 9, 2021
Transistor with isolation below source and drain
INTEL CORP3 citations73
US11610889B2Mar 21, 2023
Arsenic-doped epitaxial, source/drain regions for NMOS
INTEL CORP3 citations72
US11164974B2Nov 2, 2021
Channel layer formed in an art trench
INTEL CORP2 citations72
US11804523B2Oct 31, 2023
High aspect ratio source or drain structures with abrupt dopant profile
INTEL CORP3 citations71
US11552169B2Jan 10, 2023
Source or drain structures with phosphorous and arsenic co-dopants
INTEL CORP2 citations71
US12288803B2Apr 29, 2025
Transistor with isolation below source and drain
INTEL CORP0 citations62
US11164747B2Nov 2, 2021
Group III-V semiconductor devices having asymmetric source and drain structures
INTEL CORP0 citations62
US11049773B2Jun 29, 2021
Art trench spacers to enable fin release for non-lattice matched channels
INTEL CORP0 citations62
US12094881B2Sep 17, 2024
Arsenic-doped epitaxial source/drain regions for NMOS
INTEL CORP0 citations61
US12288808B2Apr 29, 2025
High aspect ratio source or drain structures with abrupt dopant profile
INTEL CORP0 citations60
US11557658B2Jan 17, 2023
Transistors with high density channel semiconductor over dielectric material
INTEL CORP0 citations52