Inventor
CANTORO MIRCO
KR33 patents
⚠️ This page may combine multiple inventors who share the name “CANTORO MIRCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
29 patentsUS10020396B2Jul 10, 2018
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD7 citations81
US11843051B2Dec 12, 2023
Field effect transistor including multiple aspect trapping ratio structures
SAMSUNG ELECTRONICS CO LTD2 citations72
US11018137B2May 25, 2021
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US10418448B2Sep 17, 2019
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10211339B2Feb 19, 2019
Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surface
SAMSUNG ELECTRONICS CO LTD2 citations72
US10014300B2Jul 3, 2018
Integrated circuit devices having inter-device isolation regions and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations71
US10896951B2Jan 19, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD4 citations70
US10916655B2Feb 9, 2021
Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD4 citations69
US9679975B2Jun 13, 2017
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD1 citations62
US11488956B2Nov 1, 2022
Semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations61
US11411111B2Aug 9, 2022
Field effect transistor including multiple aspect trapping ratio structures
SAMSUNG ELECTRONICS CO LTD0 citations61
US10256324B2Apr 9, 2019
Semiconductor devices having vertical transistors with aligned gate electrodes
SAMSUNG ELECTRONICS CO LTD1 citations61
US12477792B2Nov 18, 2025
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11955516B2Apr 9, 2024
Method for manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US11569349B2Jan 31, 2023
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations60
US9953883B2Apr 24, 2018
Semiconductor device including a field effect transistor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD1 citations60
US11342456B2May 24, 2022
Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations59
US10937700B2Mar 2, 2021
Semiconductor devices
SAMSUNG ELECTRONICS CO LTD1 citations58
US10276564B2Apr 30, 2019
Semiconductor device including vertical channel
SAMSUNG ELECTRONICS CO LTD1 citations58
US10361319B2Jul 23, 2019
Integrated circuit devices
SAMSUNG ELECTRONICS CO LTD1 citations57
US12132046B2Oct 29, 2024
Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10868125B2Dec 15, 2020
Semiconductor devices including field effect transistors and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10734521B2Aug 4, 2020
Field effect transistor including multiple aspect trapping ratio structures
SAMSUNG ELECTRONICS CO LTD0 citations51
US9966377B2May 8, 2018
Semiconductor devices including fin-shaped active patterns in different conductivity type regions
SAMSUNG ELECTRONICS CO LTD1 citations51
US10714397B2Jul 14, 2020
Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations50
US10559673B2Feb 11, 2020
Semiconductor devices having vertical transistors with aligned gate electrodes
SAMSUNG ELECTRONICS CO LTD0 citations50
US10453756B2Oct 22, 2019
Method for manufacturing a semiconductor device including a pair of channel semiconductor patterns
SAMSUNG ELECTRONICS CO LTD0 citations50
US10461187B2Oct 29, 2019
Integrated circuit devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations49
US9978881B2May 22, 2018
Integrated circuit devices and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations47