P

Inventor

CANTORO MIRCO

KR33 patents
⚠️ This page may combine multiple inventors who share the name “CANTORO MIRCO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

29 patents
US10020396B2Jul 10, 2018

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations81
US11843051B2Dec 12, 2023

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD2 citations72
US11018137B2May 25, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US10418448B2Sep 17, 2019

Semiconductor devices including field effect transistors and methods of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10211339B2Feb 19, 2019

Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surface

SAMSUNG ELECTRONICS CO LTD2 citations72
US10014300B2Jul 3, 2018

Integrated circuit devices having inter-device isolation regions and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations71
US10896951B2Jan 19, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations70
US10916655B2Feb 9, 2021

Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD4 citations69
US9679975B2Jun 13, 2017

Semiconductor devices including field effect transistors and methods of forming the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US11488956B2Nov 1, 2022

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD0 citations61
US11411111B2Aug 9, 2022

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD0 citations61
US10256324B2Apr 9, 2019

Semiconductor devices having vertical transistors with aligned gate electrodes

SAMSUNG ELECTRONICS CO LTD1 citations61
US12477792B2Nov 18, 2025

Method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations60
US11955516B2Apr 9, 2024

Method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations60
US11569349B2Jan 31, 2023

Semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations60
US9953883B2Apr 24, 2018

Semiconductor device including a field effect transistor and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations60
US11342456B2May 24, 2022

Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations59
US10937700B2Mar 2, 2021

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD1 citations58
US10276564B2Apr 30, 2019

Semiconductor device including vertical channel

SAMSUNG ELECTRONICS CO LTD1 citations58
US10361319B2Jul 23, 2019

Integrated circuit devices

SAMSUNG ELECTRONICS CO LTD1 citations57
US12132046B2Oct 29, 2024

Semiconductor device including separation pattern penetrating gate structure and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10868125B2Dec 15, 2020

Semiconductor devices including field effect transistors and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US10734521B2Aug 4, 2020

Field effect transistor including multiple aspect trapping ratio structures

SAMSUNG ELECTRONICS CO LTD0 citations51
US9966377B2May 8, 2018

Semiconductor devices including fin-shaped active patterns in different conductivity type regions

SAMSUNG ELECTRONICS CO LTD1 citations51
US10714397B2Jul 14, 2020

Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations50
US10559673B2Feb 11, 2020

Semiconductor devices having vertical transistors with aligned gate electrodes

SAMSUNG ELECTRONICS CO LTD0 citations50
US10453756B2Oct 22, 2019

Method for manufacturing a semiconductor device including a pair of channel semiconductor patterns

SAMSUNG ELECTRONICS CO LTD0 citations50
US10461187B2Oct 29, 2019

Integrated circuit devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations49
US9978881B2May 22, 2018

Integrated circuit devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations47

CANTORO MIRCO

2 patents

CHOI YONG JOON

1 patent

IMEC

1 patent