Inventor
HAOND MICHEL
FR17 patents
⚠️ This page may combine multiple inventors who share the name “HAOND MICHEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
6 patentsUS6537894B2Mar 25, 2003
Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device
ST MICROELECTRONICS SA43 citations92
US6528399B1Mar 4, 2003
MOSFET transistor with short channel effect compensated by the gate material
ST MICROELECTRONICS SA29 citations91
US6451669B2Sep 17, 2002
Method of forming insulated metal interconnections in integrated circuits
ST MICROELECTRONICS SA36 citations91
US6724660B2Apr 20, 2004
Integrated semiconductor memory device having quantum well buried in a substrate
ST MICROELECTRONICS SA8 citations74
US6555482B2Apr 29, 2003
Process for fabricating a MOS transistor having two gates, one of which is buried and corresponding transistor
ST MICROELECTRONICS SA10 citations73
US6812113B1Nov 2, 2004
Process for achieving intermetallic and/or intrametallic air isolation in an integrated circuit, and integrated circuit obtained
ST MICROELECTRONICS SA12 citations67
FRANCE TELECOM
3 patentsUS5330617AJul 19, 1994
Method for etching integrated-circuit layers to a fixed depth and corresponding integrated circuit
FRANCE TELECOM60 citations96
US5604149AFeb 18, 1997
Method of and device for isolating active areas of a semiconducor substrate by quasi-plane shallow trenches
FRANCE TELECOM61 citations93
US5641704AJun 24, 1997
Method of isolating active areas of a semiconductor substrate by shallow trenches and narrow trenches
FRANCE TELECOM14 citations71
FRANCE ETAT
3 patentsUS5089870AFeb 18, 1992
Soi mos transistor with a substrate-source connection
FRANCE ETAT28 citations92
US5023197AJun 11, 1991
Manufacturing process of mesa SOI MOS transistor
FRANCE ETAT13 citations70
US4678538AJul 7, 1987
Process for the production of an insulating support on an oriented monocrystalline silicon film with localized defects
FRANCE ETAT6 citations63
HAOND MICHEL
2 patentsUS4725561AFeb 16, 1988
Process for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallization
HAOND MICHEL32 citations91
US4773964ASep 27, 1988
Process for the production of an oriented monocrystalline silicon film with localized defects on an insulating support
HAOND MICHEL19 citations80