Inventor

HSU PENG-FU

TW41 patents

⚠️ This page may combine multiple inventors who share the name “HSU PENG-FU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSU PENG-FU

TAIWAN SEMICONDUCTOR MFG

Hybrid process for forming metal gates

Semiconductor devices with dual-metal gate structures and fabrication methods thereof

Zirconium oxide and hafnium oxide etching using halogen containing chemicals

Process for removing organic materials during formation of a metal interconnect

MOS devices with continuous contact etch stop layer

Process for improving dielectric properties in low-k organosilicate dielectric material

Metal silicide etch resistant plasma etch method

Aqueous cleaning composition containing copper-specific corrosion inhibitor

Semiconductor devices and methods with bilayer dielectrics

Methods for improving sheet resistance of silicide layer after removal of etch stop layer

Semiconductor device gate structure including a gettering layer

Semiconductor devices with dual-metal gate structures and fabrication methods thereof

Method for photoresist stripping and treatment of low-k dielectric material

Wet cleaning cavitation system and method to remove particulate wafer contamination

Wet etchant composition and method for etching HfO2 and ZrO2

Method of fabricating dual high-k metal gates for MOS devices

Contact hole structures and contact structures and fabrication methods thereof

Methods and structures for critical dimension and profile measurement

Base oxide engineering for high-K gate stacks

FIN-FET device structure formed employing bulk semiconductor substrate

Semiconductor devices and methods with bilayer dielectrics

Measuring low dielectric constant film properties during processing

ASM IP HOLDING BV

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Method of forming a doped metal carbide film on a substrate and related semiconductor device structures

Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

Methods for forming low temperature semiconductor layers and related semiconductor device structures

Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures

HSU PENG-FU

Method of fabricating dual high-k metal gate for MOS devices

Method of fabricating dual high-k metal gates for MOS devices

Hybrid process for forming metal gates of MOS devices

TAIWAN SEMICONDUCTOR MFG CO LTD

Interconnect structures including a fin structure and a metal cap

MASUOKA YURI

Method to improve dielectric quality in high-k metal gate technology

CA NAT RESEARCH COUNCIL

Self-reducible copper(II) source reagents for chemical vapor deposition of copper metal

HOU YONG-TIAN

CMOS dual metal gate semiconductor device