P
US7208331B2ExpiredUtilityPatentIndex 52

Methods and structures for critical dimension and profile measurement

Assignee: TAIWAN SEMICONDUCTOR MFGPriority: Sep 24, 2004Filed: Sep 24, 2004Granted: Apr 24, 2007
Est. expirySep 24, 2024(expired)· nominal 20-yr term from priority
Inventors:SHIEH JYU-HORNGCHIOU WEN-CHIHHSU PENG-FUPERNG BAW-CHINGTAO HUN-JANCHEN CHIA-JEN
H10P 74/277
52
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Claims

Abstract

Methods and structures for critical dimension or profile measurement are disclosed. The method provides a substrate having periodic openings therein. Material layers are formed in the openings, substantially planarizing a surface of the substrate. A scattering method is applied to the substrate with the material layers for critical dimension (CD) or profile measurement.

Claims

exact text as granted — not AI-modified
1. A method for measuring critical dimension (CD) or profile of a structure, comprising:
 providing a substrate having periodic openings therein, material layers formed in the openings substantially planarizing a surface of the substrate, the substrate further comprising a dielectric layer thereon and the openings formed in the dielectric layer, wherein the material layers are formed in the openings by a dual damascene, contact or via process; and 
 applying a scattering method to the substrate with the material layers, wherein no shielding layer is formed over the material layers. 
 
   
   
     2. The method of  claim 1 , wherein the scattering method comprises a scatterometry optical critical dimension (OCD) method. 
   
   
     3. A structure for critical dimension (CD) or profile of a structure, which comprises a substrate having periodic openings therein, and material layers formed in the openings substantially planarizing a surface of the substrate so as to measure dimensions of the structure by using a scattering method, the substrate comprising a dielectric layer on the substrate, the material layers formed in the dielectric layer, wherein the material layers are metal layers and no shielding layer is formed over the material layers. 
   
   
     4. The structure of  claim 3 , wherein the material layers are oxide. 
   
   
     5. The structure of  claim 3 , wherein the metal layers are copper, aluminum copper or tungsten. 
   
   
     6. The structure of  claim 3 , wherein the scattering method comprises a scatterometry optical critical dimension (OCD) method.

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