P

Inventor

SHEU SHYH-SHYUAN

TW44 patents
⚠️ This page may combine multiple inventors who share the name “SHEU SHYH-SHYUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IND TECH RES INST

28 patents
US8040723B2Oct 18, 2011

Voltage compensation circuit, multi-level memory device with the same, and voltage compensation method for reading the multi-level memory device

IND TECH RES INST44 citations93
US11625588B2Apr 11, 2023

Neuron circuit and artificial neural network chip

IND TECH RES INST8 citations85
US7974122B2Jul 5, 2011

Verification circuits and methods for phase change memory array

IND TECH RES INST15 citations84
US7773410B2Aug 10, 2010

Writing system and method for phase change memory

IND TECH RES INST8 citations84
US7796454B2Sep 14, 2010

Sensing circuit of a phase change memory and sensing method thereof

IND TECH RES INST8 citations83
US7787281B2Aug 31, 2010

Writing circuit for a phase change memory

IND TECH RES INST15 citations83
US7242174B1Jul 10, 2007

Digital sensing circuit

IND TECH RES INST16 citations83
US7236390B1Jun 26, 2007

Bit cell of organic memory

IND TECH RES INST18 citations83
US8942027B1Jan 27, 2015

Memory storage circuit and method of driving memory storage circuit

IND TECH RES INST8 citations81
US9887007B1Feb 6, 2018

Variable-resistance memory and writing method thereof

IND TECH RES INST3 citations73
US9443588B2Sep 13, 2016

Resistive memory system, driver circuit thereof and method for setting resistance thereof

IND TECH RES INST5 citations73
US9136843B2Sep 15, 2015

Through silicon via repair circuit of semiconductor device

IND TECH RES INST4 citations73
US7672176B2Mar 2, 2010

Writing circuit for a phase change memory

IND TECH RES INST7 citations73
US7933147B2Apr 26, 2011

Sensing circuit of a phase change memory and sensing method thereof

IND TECH RES INST5 citations62
US7889547B2Feb 15, 2011

Memory and writing method thereof

IND TECH RES INST5 citations62
US7885109B2Feb 8, 2011

Memory and method for dissipation caused by current leakage

IND TECH RES INST3 citations62
US7796455B2Sep 14, 2010

Device controlling phase change storage element and method thereof

IND TECH RES INST3 citations62
US7773411B2Aug 10, 2010

Phase change memory and control method thereof

IND TECH RES INST3 citations62
US7515490B2Apr 7, 2009

Sensing circuit for organic memory

IND TECH RES INST3 citations62
US12260321B2Mar 25, 2025

Data feature augmentation system and method for low-precision neural network

IND TECH RES INST0 citations61
US10914618B2Feb 9, 2021

Readout circuit for sensor and readout method thereof

IND TECH RES INST0 citations61
US9378785B2Jun 28, 2016

Resistive random-access memory devices

IND TECH RES INST2 citations61
US12265904B2Apr 1, 2025

Apparatus and method for neural network computation

IND TECH RES INST0 citations50
US10324054B2Jun 18, 2019

Method of manufacturing sensor device

IND TECH RES INST0 citations50
US10156535B2Dec 18, 2018

Sensor device and method of manufacturing the same

IND TECH RES INST0 citations50
US10101175B2Oct 16, 2018

Sensor interface circuit and sensor output adjusting method

IND TECH RES INST0 citations50
US8872543B2Oct 28, 2014

Configurable logic block and operation method thereof

IND TECH RES INST1 citations50
US7369424B2May 6, 2008

Programmable memory cell and operation method

IND TECH RES INST0 citations37

SHEU SHYH-SHYUAN

5 patents

NANYA TECHNOLOGY CORP

3 patents

CHIU PI-FENG

2 patents

LIN CHIH-HE

2 patents

WANG MIN-CHUAN

1 patent

LIN KU-FENG

1 patent

HIGGS OPL CAPITAL LLC

1 patent

TAIN RA-MIN

1 patent