Inventor
MARCADAL CHRISTOPHE
US37 patents
⚠️ This page may combine multiple inventors who share the name “MARCADAL CHRISTOPHE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
32 patentsUS6905541B2Jun 14, 2005
Method and apparatus of generating PDMAT precursor
APPLIED MATERIALS INC119 citations99
US6660622B2Dec 9, 2003
Process for removing an underlying layer and depositing a barrier layer in one reactor
APPLIED MATERIALS INC120 citations99
US6607976B2Aug 19, 2003
Copper interconnect barrier layer structure and formation method
APPLIED MATERIALS INC289 citations99
US6498091B1Dec 24, 2002
Method of using a barrier sputter reactor to remove an underlying barrier layer
APPLIED MATERIALS INC626 citations99
US6110530AAug 29, 2000
CVD method of depositing copper films by using improved organocopper precursor blend
APPLIED MATERIALS INC272 citations99
US7524762B2Apr 28, 2009
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
APPLIED MATERIALS INC61 citations98
US7241686B2Jul 10, 2007
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
APPLIED MATERIALS INC89 citations98
US6953742B2Oct 11, 2005
Tantalum barrier layer for copper metallization
APPLIED MATERIALS INC79 citations98
US6562715B1May 13, 2003
Barrier layer structure for copper metallization and method of forming the structure
APPLIED MATERIALS INC112 citations98
US7682946B2Mar 23, 2010
Apparatus and process for plasma-enhanced atomic layer deposition
APPLIED MATERIALS INC40 citations96
US7270709B2Sep 18, 2007
Method and apparatus of generating PDMAT precursor
APPLIED MATERIALS INC50 citations96
US7026238B2Apr 11, 2006
Reliability barrier integration for Cu application
APPLIED MATERIALS INC99 citations96
US6596643B2Jul 22, 2003
CVD TiSiN barrier for copper integration
APPLIED MATERIALS INC60 citations96
US6596085B1Jul 22, 2003
Methods and apparatus for improved vaporization of deposition material in a substrate processing system
APPLIED MATERIALS INC71 citations95
US6358323B1Mar 19, 2002
Method and apparatus for improved control of process and purge material in a substrate processing system
APPLIED MATERIALS INC73 citations94
US7576002B2Aug 18, 2009
Multi-step barrier deposition method
APPLIED MATERIALS INC13 citations93
US6958296B2Oct 25, 2005
CVD TiSiN barrier for copper integration
APPLIED MATERIALS INC40 citations93
US7597758B2Oct 6, 2009
Chemical precursor ampoule for vapor deposition processes
APPLIED MATERIALS INC16 citations92
US7562672B2Jul 21, 2009
Chemical delivery apparatus for CVD or ALD
APPLIED MATERIALS INC15 citations92
US7524374B2Apr 28, 2009
Method and apparatus for generating a precursor for a semiconductor processing system
APPLIED MATERIALS INC26 citations92
US7265048B2Sep 4, 2007
Reduction of copper dewetting by transition metal deposition
APPLIED MATERIALS INC47 citations92
US7244683B2Jul 17, 2007
Integration of ALD/CVD barriers with porous low k materials
APPLIED MATERIALS INC42 citations92
US7833358B2Nov 16, 2010
Method of recovering valuable material from exhaust gas stream of a reaction chamber
APPLIED MATERIALS INC17 citations84
US7748400B2Jul 6, 2010
Chemical delivery apparatus for CVD or ALD
APPLIED MATERIALS INC8 citations84
US7568495B2Aug 4, 2009
Chemical delivery apparatus for CVD or ALD
APPLIED MATERIALS INC9 citations84
US7521379B2Apr 21, 2009
Deposition and densification process for titanium nitride barrier layers
APPLIED MATERIALS INC11 citations84
US7588736B2Sep 15, 2009
Apparatus and method for generating a chemical precursor
APPLIED MATERIALS INC7 citations74
US6455421B1Sep 24, 2002
Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
APPLIED MATERIALS INC13 citations74
US7838441B2Nov 23, 2010
Deposition and densification process for titanium nitride barrier layers
APPLIED MATERIALS INC5 citations63
US7832432B2Nov 16, 2010
Chemical delivery apparatus for CVD or ALD
APPLIED MATERIALS INC3 citations63
US7691742B2Apr 6, 2010
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
APPLIED MATERIALS INC2 citations63
US12334318B2Jun 17, 2025
Plasma preclean system for cluster tool
APPLIED MATERIALS INC0 citations42