P

Inventor

YOU BUDONG

CN49 patents
⚠️ This page may combine multiple inventors who share the name “YOU BUDONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

VOLTERRA SEMICONDUCTOR CORP

24 patents
US7405117B2Jul 29, 2008

Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor

VOLTERRA SEMICONDUCTOR CORP176 citations99
US7405443B1Jul 29, 2008

Dual gate lateral double-diffused MOSFET (LDMOS) transistor

VOLTERRA SEMICONDUCTOR CORP84 citations98
US7888222B2Feb 15, 2011

Method of fabricating a lateral double-diffused MOSFET

VOLTERRA SEMICONDUCTOR CORP32 citations96
US7220633B2May 22, 2007

Method of fabricating a lateral double-diffused MOSFET

VOLTERRA SEMICONDUCTOR CORP35 citations96
US7074659B2Jul 11, 2006

Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor

VOLTERRA SEMICONDUCTOR CORP54 citations96
US7999318B2Aug 16, 2011

Heavily doped region in double-diffused source MOSFET (LDMOS) transistor and a method of fabricating the same

VOLTERRA SEMICONDUCTOR CORP21 citations93
US7981739B1Jul 19, 2011

Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor

VOLTERRA SEMICONDUCTOR CORP29 citations93
US7868378B1Jan 11, 2011

Methods and apparatus for LDMOS transistors

VOLTERRA SEMICONDUCTOR CORP24 citations93
US7671411B2Mar 2, 2010

Lateral double-diffused MOSFET transistor with a lightly doped source

VOLTERRA SEMICONDUCTOR CORP19 citations93
US7163856B2Jan 16, 2007

Method of fabricating a lateral double-diffused mosfet (LDMOS) transistor and a conventional CMOS transistor

VOLTERRA SEMICONDUCTOR CORP24 citations93
US7038274B2May 2, 2006

Switching regulator with high-side p-type device

VOLTERRA SEMICONDUCTOR CORP35 citations92
US7666731B2Feb 23, 2010

Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor and a conventional CMOS transistor

VOLTERRA SEMICONDUCTOR CORP8 citations84
US7465621B1Dec 16, 2008

Method of fabricating a switching regulator with a high-side p-type device

VOLTERRA SEMICONDUCTOR CORP11 citations84
US7230470B1Jun 12, 2007

Power switch using a field-effect transistor (FET) pair

VOLTERRA SEMICONDUCTOR CORP17 citations84
US6433614B1Aug 13, 2002

MOSFET-based switch

VOLTERRA SEMICONDUCTOR CORP15 citations84
US6937086B1Aug 30, 2005

Method and apparatus for operating a field-effect transistor (FET) pair

VOLTERRA SEMICONDUCTOR CORP9 citations74
US6529056B1Mar 4, 2003

Circuit with FET transistor pair

VOLTERRA SEMICONDUCTOR CORP6 citations74
US10559559B2Feb 11, 2020

Integrated protection devices with monitoring of electrical characteristics

VOLTERRA SEMICONDUCTOR CORP4 citations72
US8936980B1Jan 20, 2015

Dual gate lateral double-diffused MOSFET (LDMOS) transistor

VOLTERRA SEMICONDUCTOR CORP3 citations63
US8354717B2Jan 15, 2013

Lateral double-diffused MOSFET

VOLTERRA SEMICONDUCTOR CORP3 citations63
US6703888B1Mar 9, 2004

Method of operating circuit with FET transistor pair

VOLTERRA SEMICONDUCTOR CORP2 citations63
US9224603B2Dec 29, 2015

Method of fabricating power transistor with protected channel

VOLTERRA SEMICONDUCTOR CORP1 citations52
US8994106B2Mar 31, 2015

Lateral double-diffused MOSFET

VOLTERRA SEMICONDUCTOR CORP0 citations52
US8698242B2Apr 15, 2014

Lateral double-diffused MOSFET

VOLTERRA SEMICONDUCTOR CORP0 citations52

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD

11 patents
US11121251B2Sep 14, 2021

Laterally diffused metal oxide semiconductor device and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD2 citations72
US10903340B2Jan 26, 2021

Laterally diffused metal oxide semiconductor structure and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD2 citations72
US10998416B2May 4, 2021

Laterally diffused metal oxide semiconductor device and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD3 citations71
US11830932B2Nov 28, 2023

Laterally diffused metal oxide semiconductor structure and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations62
US11710787B2Jul 25, 2023

Laterally diffused metal oxide semiconductor device and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations62
US11742206B2Aug 29, 2023

Laterally diffused metal oxide semiconductor device and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations61
US11949010B2Apr 2, 2024

Metal oxide semiconductor device and method for manufacturing the same

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations53
US11329153B2May 10, 2022

Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations52
US9627513B2Apr 18, 2017

Method for manufacturing lateral double-diffused metal oxide semiconductor transistor

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations39
US10438854B2Oct 8, 2019

Method for manufacturing CMOS structure

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations38
US10332804B2Jun 25, 2019

Method for manufacturing CMOS structure

SILERGY SEMICONDUCTOR TECHNOLOGY HANGZHOU LTD0 citations38

YOU BUDONG

8 patents

ZUNIGA MARCO A

3 patents

LIDSKY DAVID

1 patent

LU YANG

1 patent

SILERGY TECHNOLOGY

1 patent