Inventor
LIN YUNG-FONG
TW13 patents
Patents
13 patentsUS11049799B1Jun 29, 2021
Semiconductor structure and method for forming the same
VANGUARD INT SEMICONDUCT CORP7 citations83
US10790143B1Sep 29, 2020
Semiconductor structure, high electron mobility transistor, and method for fabricating semiconductor structure
VANGUARD INT SEMICONDUCT CORP4 citations70
US11955522B2Apr 9, 2024
Semiconductor structure and method of forming the same
VANGUARD INT SEMICONDUCT CORP1 citations61
US10971355B2Apr 6, 2021
Substrates and methods for forming the same
VANGUARD INT SEMICONDUCT CORP0 citations61
US12027413B2Jul 2, 2024
Semiconductor structure and method of fabricating the same
VANGUARD INT SEMICONDUCT CORP0 citations60
US11929407B2Mar 12, 2024
Method of fabricating high electron mobility transistor
VANGUARD INT SEMICONDUCT CORP0 citations59
US11552171B2Jan 10, 2023
Method for fabricating semiconductor structure including the substrate structure
VANGUARD INT SEMICONDUCT CORP0 citations59
US11380767B2Jul 5, 2022
High electron mobility transistor and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP1 citations59
US11183563B2Nov 23, 2021
Substrate structure and method for fabricating semiconductor structure including the substrate structure
VANGUARD INT SEMICONDUCT CORP1 citations59
US11211331B2Dec 28, 2021
Semiconductor structure having a via and methods of manufacturing the same
VANGUARD INT SEMICONDUCT CORP1 citations55
US11011391B2May 18, 2021
Semiconductor structure and method for fabricating the same
VANGUARD INT SEMICONDUCT CORP0 citations50
US11955397B2Apr 9, 2024
Semiconductor structure
VANGUARD INT SEMICONDUCT CORP0 citations47
US12132103B2Oct 29, 2024
High electron mobility transistor and fabrication method thereof
VANGUARD INT SEMICONDUCT CORP0 citations45