Inventor
KITANO NAOMU
JP22 patents
⚠️ This page may combine multiple inventors who share the name “KITANO NAOMU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON ANELVA CORP
8 patentsUS7867847B2Jan 11, 2011
Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitride
CANON ANELVA CORP7 citations84
US8030694B2Oct 4, 2011
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
CANON ANELVA CORP5 citations74
US7857946B2Dec 28, 2010
Sputtering film forming method, electronic device manufacturing method, and sputtering system
CANON ANELVA CORP7 citations71
US8053311B2Nov 8, 2011
Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen
CANON ANELVA CORP3 citations63
US8481382B2Jul 9, 2013
Method and apparatus for manufacturing semiconductor device
CANON ANELVA CORP2 citations60
US7655549B2Feb 2, 2010
Method for depositing a metal gate on a high-k dielectric film
CANON ANELVA CORP4 citations57
US8026143B2Sep 27, 2011
Semiconductor element and manufacturing method thereof
CANON ANELVA CORP1 citations51
US9437702B2Sep 6, 2016
Electronic component manufacturing method and electrode structure
CANON ANELVA CORP0 citations37
NAKAGAWA TAKASHI
4 patentsUS8324608B2Dec 4, 2012
Nonvolatile storage element and manufacturing method thereof
NAKAGAWA TAKASHI3 citations62
US8415753B2Apr 9, 2013
Semiconductor device and method of manufacturing the same
NAKAGAWA TAKASHI4 citations61
US8524617B2Sep 3, 2013
Methods for manufacturing dielectric films
NAKAGAWA TAKASHI0 citations52
US8786031B2Jul 22, 2014
Metal nitride film, semiconductor device using the metal nitride film, and manufacturing method of semiconductor device
NAKAGAWA TAKASHI0 citations41