Method of forming dielectric films

Abstract

A method of forming dielectric films including a metal silicate on a silicon substrate comprises a first step of oxidizing a surface layer portion of the silicon substrate and forming a silicon dioxide film; a second step of irradiating ion on the surface of the silicon dioxide film and making the surface layer portion of the silicon dioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and a fourth step of oxidizing the metal film and forming a metal silicate film that diffuses a metal from the metal film to the silicon dioxide film.

1. A method of forming a dielectric film including a metal silicate on a silicon substrate, comprising:
 a first step of oxidizing a surface of the silicon substrate for forming a silicon oxide film; 
 a second step of irradiating a rare gas ion on the surface of the silicon oxide film for forming the surface of the silicon oxide film which does not contact the silicon substrate into a reaction-accelerating layer with Si—O bonds severed; 
 a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and 
 a fourth step of oxidizing the metal film for forming a metal silicate film that diffuses a metal from the metal film to the silicon oxide film. 
 
     
     
       2. The method of forming a dielectric film according to  claim 1 , further comprising a fifth step of nitriding the metal silicate film after the fourth step. 
     
     
       3. The method of forming a dielectric film according to  claim 2 , wherein the nitriding of the fifth step is executed by radical nitriding. 
     
     
       4. The method of forming a dielectric film according to  claim 1 , wherein the incident energy of the ion is 2 eV or more and 20 eV or less. 
     
     
       5. The method of forming a dielectric film according to  claim 1 , wherein the third step is executed by sputtering. 
     
     
       6. The method of forming a dielectric film according to  claim 1 , wherein the reaction-accelerating layer is made into the metal silicate film by the third step. 
     
     
       7. The method of forming a dielectric film according to  claim 1 , wherein the oxidation of the fourth step is executed by radical oxidation. 
     
     
       8. The method of forming a dielectric film according to  claim 1 , wherein the surface of the silicon oxide film is formed into the reaction-accelerating layer employing surface wave interference plasma. 
     
     
       9. A method of forming a dielectric film including a metal silicate on a silicon substrate, comprising:
 a first step of oxidizing a surface of the silicon substrate for forming a silicon oxide film; 
 a second step of irradiating an ion selected from the group consisting of a rare gas ion, nitrogen ion, oxygen ion, oxide ion and nitride ion at an incident energy of the ion of 2 eV to 20 eV on the surface of the silicon oxide film for forming the surface of the silicon oxide film which does not contact the silicon substrate into a reaction-accelerating layer with severed Si—O bonds; 
 a third step of laminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere; and 
 a fourth step of oxidizing the metal film for forming a metal silicate film that diffuses a metal from the metal film to the silicon oxide film.