Inventor

BOUCHE GUILLAUME

US160 patents

⚠️ This page may combine multiple inventors who share the name “BOUCHE GUILLAUME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BOUCHE GUILLAUME

GLOBALFOUNDRIES INC

Inner spacer formation for nanosheet field-effect transistors with tall suspensions

Air-gap gate sidewall spacer and method

Fabricating stacked nanowire, field-effect transistors

Self aligned buried power rail

Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines

Method of forming semiconductor structure including suspended semiconductor layer and resulting structure

Methods of forming nanowire devices with spacers and the resulting devices

2D self-aligned via first process flow

Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts

Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines

Method for creating self-aligned compact contacts in an IC device meeting fabrication spacing constraints

Transistor contacts self-aligned in two dimensions

Methods, apparatus and system for a passthrough-based architecture

10 nm alternative N/P doped fin for SSRW scheme

Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices

Contact line having insulating spacer therein and method of forming same

Combined SADP fins for semiconductor devices and methods of making the same

Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar

Self-aligned gate cut isolation

Self-aligned metal wire on contact structure and method for forming same

Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device

Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit

Method for fabricating a finFET metallization architecture using a self-aligned contact etch

Method of forming a pattern for interconnection lines in an integrated circuit wherein the pattern includes gamma and beta block mask portions

Self-aligned back end of line cut

Method of forming self aligned continuity blocks for mandrel and non-mandrel interconnect lines

Integrated circuits with dual silicide contacts and methods for fabricating same

Self-aligned back end of line cut

Methods of forming nanowire devices with doped extension regions and the resulting devices

Cut first alternative for 2D self-aligned via

Integrated circuits with nanowires and methods of manufacturing the same

Precut metal lines

Apparatus and method for forming interconnection lines having variable pitch and variable widths

Self-aligned contact etch for fabricating a FinFET

Interconnection lines having variable widths and partially self-aligned continuity cuts

Interconnection cells having variable width metal lines and fully-self aligned continuity cuts

Self-aligned gate contact formation

Opposite polarity borderless replacement metal contact scheme

Method for creating self-aligned transistor contacts

Method of forming ANA regions in an integrated circuit

MAXIM INTEGRATED PRODUCTS

Bragg mirror optimized for shear waves

Bulk acoustic resonators with multi-layer electrodes

Method to control BAW resonator top electrode edge during patterning

Vertical semiconductor device having frontside interconnections

ST MICROELECTRONICS SA

Component comprising a variable capacitor

Integrated circuit connecting pad

Lateral displacement multiposition microswitch

TRIQUINT SEMICONDUCTOR INC

Planarization method in the fabrication of a circuit

IBM

Transistor with recessed cross couple for gate contact over active region integration

COMMISSARIAT ENERGIE ATOMIQUE

Method for forming a tunable piezoelectric microresonator