Inventor
PARK SANG-WON
KR56 patents
⚠️ This page may combine multiple inventors who share the name “PARK SANG-WON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
26 patentsUS9779790B2Oct 3, 2017
Nonvolatile memory device and method of driving word line of the nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations84
US9412456B2Aug 9, 2016
Nonvolatile memory device, programming method of nonvolatile memory device and memory system including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD6 citations84
US10712955B2Jul 14, 2020
Non-volatile memory device including memory planes, and operating method thereof
SAMSUNG ELECTRONICS CO LTD9 citations83
US10804293B2Oct 13, 2020
Nonvolatile memory device, vertical NAND flash memory device and SSD device including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US9502124B2Nov 22, 2016
Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels
SAMSUNG ELECTRONICS CO LTD4 citations73
US11515325B2Nov 29, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US11495541B2Nov 8, 2022
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations72
US10395741B2Aug 27, 2019
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations72
US10325657B2Jun 18, 2019
Non-volatile memory devices and methods of programming the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10102909B2Oct 16, 2018
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations72
US11011208B2May 18, 2021
Semiconductor memory device including parallel substrates in three dimensional structures
SAMSUNG ELECTRONICS CO LTD3 citations69
US12002514B2Jun 4, 2024
Nonvolatile memory and storage device including same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11854982B2Dec 26, 2023
Three-dimensional semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11783900B2Oct 10, 2023
Erase method of non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11367487B2Jun 21, 2022
Nonvolatile memory device and erase method thereof
SAMSUNG ELECTRONICS CO LTD0 citations62
US11227659B2Jan 18, 2022
Nonvolatile memory device and storage device including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11062775B2Jul 13, 2021
Nonvolatile memory device and storage device including nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12176046B2Dec 24, 2024
Operation method of memory device and operation method of memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12493548B2Dec 9, 2025
Memory device reducing i/o signal lines through i/o mapping connection and memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations59
US10699782B2Jun 30, 2020
Nonvolatile memory device and method of operation with a word line setup time based on two sequential read voltages
SAMSUNG ELECTRONICS CO LTD0 citations52
US10388367B2Aug 20, 2019
Nonvolatile memory device with controlled word line setup time
SAMSUNG ELECTRONICS CO LTD0 citations52
US10382993B2Aug 13, 2019
Inter-cell interference measurement method and device in flexible duplex system
SAMSUNG ELECTRONICS CO LTD0 citations52
US12531122B2Jan 20, 2026
Operation method of memory device including memory block connected to wordlines
SAMSUNG ELECTRONICS CO LTD0 citations51
US11322205B2May 3, 2022
Non-volatile memory device and method for programming the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US11200952B2Dec 14, 2021
Non-volatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12488856B2Dec 2, 2025
Memory device, operation method of memory device, and operation method of test device configured to test memory device
SAMSUNG ELECTRONICS CO LTD0 citations47
OLIVIA GARDEN INT INC
4 patentsPARK SANG-WON
3 patentsUS9431062B2Aug 30, 2016
Nonvolatile memory device and method of driving word line of the nonvolatile memory
PARK SANG-WON7 citations83
US8348778B2Jan 8, 2013
Golf ball feeding apparatus
PARK SANG-WON3 citations62
US9324440B2Apr 26, 2016
Nonvolatile memory devices, operating methods thereof and memory systems including the same
PARK SANG-WON2 citations61
INTEL CORP
3 patentsUS9406547B2Aug 2, 2016
Techniques for trench isolation using flowable dielectric materials
INTEL CORP9 citations81
US10147634B2Dec 4, 2018
Techniques for trench isolation using flowable dielectric materials
INTEL CORP3 citations70
US11270995B2Mar 8, 2022
Isolation in integrated circuit devices
INTEL CORP0 citations55
PARK SANG WON
2 patentsKWAK DONGHUN
1 patentUNIV LOUISIANA STATE
1 patentHYNIX SEMICONDUCTOR INC
1 patentHYUNDAI MOTOR CO LTD
1 patentLIM BONGSOON
1 patent(unassigned)
1 patentSHIN HEE SUN
1 patentHYUNDAI MOBIS CO LTD
1 patentKIM JI HOON
1 patentCHOI SANG YUN
1 patentSK ON CO LTD
1 patentUNIV IND & ACAD COLLABORATION
1 patentShowing the top 50 of 56 patents by PatentIndex Score.