Inventor

MAKIYAMA KOZO

JP73 patents

⚠️ This page may combine multiple inventors who share the name “MAKIYAMA KOZO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MAKIYAMA KOZO

FUJITSU LTD

Method of processing resist, semiconductor device, and method of producing the same

Resist pattern forming method and semiconductor device fabrication method

Semiconductor device having a regrowth crystal region

Semiconductor device with mushroom electrode and manufacture method thereof

Semiconductor apparatus

Compound semiconductor device with mesa structure

Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof

Nitride semiconductor device and manufacturing method for the same

Compound semiconductor device with high power and reduced off-leakage and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Method for making semiconductor device

Method for making semiconductor device

Compound semiconductor device and manufacturing method of the same

Semiconductor device and method for manufacturing semiconductor device

Compound semiconductor device with T-shaped gate electrode and its manufacture

Semiconductor device and manufacturing method thereof, and gate electrode and manufacturing method thereof

Compound semiconductor device, method of manufacturing compound semiconductor device, and amplifier

Compound semiconductor device including protective layer and ohmic electrode

Method for manufacturing gate insulator for HEMT

Compound semiconductor device

Semiconductor device with mushroom electrode and manufacture method thereof

Semiconductor device, semiconductor device fabrication method, and electronic device

Manufacturing method for compound semiconductor device

Semiconductor device

Compound semiconductor device and method with high concentration dopant layer in regrown compound semiconductor

Semiconductor device and fabrication method therefor, and high-frequency amplifier

AlOx/InOx gate insulator for HEMT

Compound semiconductor device including diffusion preventing layer to suppress current collapse phenomenon, method of manufacturing compound semiconductor device, power supply unit, and amplifier

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device, power supply apparatus and high-frequency amplifier

Semiconductor device and method of manufacturing semiconductor device

Compound semiconductor device and manufacturing method of the same

Semiconductor device and method of manufacturing the same

HEMT with a metal film between the gate electrode and the drain electrode

Method for manufacturing semiconductor HEMT device with stoichiometric silicon nitride layer

Semiconductor device including insulating films with different moisture resistances and fabrication method thereof

Method of manufacturing compound semiconductor device

Semiconductor device with plural electrodes formed on substrate

Semiconductor HEMT device with stoichiometric silicon nitride layer

Compound semiconductor device and method of manufacturing the same

MAKIYAMA KOZO

Semiconductor device and manufacturing method of the same

Compound semiconductor device with T-shaped gate electrode

Compound semiconductor device and manufacturing method thereof

Method of processing resist, semiconductor device, and method of producing the same

Semiconductor device with mushroom electrode and manufacture method thereof

KANAMURA MASAHITO

Compound semiconductor device and method of manufacturing the same

EUDYNA DEVICES INC

Semiconductor device having a mushroom gate with hollow space

OHKI TOSHIHIRO

Compound semiconductor device comprising electrode above compound semiconductor layer and method of manufacturing the same

FUJITSU QUANTUM DEVICES LTD

Semiconductor device with mushroom electrode and manufacture method thereof

KURAHASHI NAOKO

Semiconductor device with a gate electrode having a shape formed based on a slope and gate lower opening and method of manufacturing the same