Inventor

HSUEH SHENG-YUAN

TW57 patents

⚠️ This page may combine multiple inventors who share the name “HSUEH SHENG-YUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HSUEH SHENG-YUAN

UNITED MICROELECTRONICS CORP

High electron mobility transistor (HEMT) and forming method thereof

Method for fabricating single diffusion break structure directly under a gate line

One-time programmable memory capacitor structure and manufacturing method thereof

Method of forming fin forced stack inverter

Semiconductor memory structure and fabrication method thereof

High electron mobility transistor (HEMT) and forming method thereof

Semiconductor memory cell and the forming method thereof

Magnetoresistive random access memory

Embedded MRAM structure and method of fabricating the same

Semiconductor device and method of forming the same

Alignment mark and measurement method thereof

Semiconductor device and method for fabricating the same

Data storage cell, memory, and memory fabrication method thereof

High electron mobility transistor and method for fabricating the same

Semiconductor device and method for fabricating the same

High electron mobility transistor and method for fabricating the same

High electron mobility transistor and method for fabricating the same

High electron mobility transistor and method for fabricating the same

Data storage cell, memory, and memory fabrication method thereof

MRAM having multilayered interconnect structures

High electron mobility transistor (HEMT) and forming method thereof

High electron mobility transistor and method for fabricating the same

Mask and method of forming pattern

Fuse structure for a semiconductor device

One-time programmable memory cell

Magnetoresistive random access memory

Magnetoresistive random access memory

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

Magnetoresistive random access memory

Magnetoresistive random access memory

One-time programmable memory structure

One-time programmable memory cell and fabrication method thereof

Resistor and resistor-transistor-logic circuit with GaN structure and method of manufacturing the same

Magnetoresistive random access memory

Magnetoresistive random access memory

One-time programmable (OTP) memory cell and fabrication method thereof

3D semiconductor structure and method of fabricating the same

3D semiconductor structure and method of fabricating the same

Test key structure and method of measuring resistance of vias

Mark pattern in semiconductor device

One-time programmable memory device

One-time programmable memory device

1-1 fin forced stack inverter

Bit cell structure for one-time-programming

Magnetoresistive random access memory wherein number of memory cells in each string is equal to number of strings connected in parallel

Semiconductor device and method for fabricating the same

Method of manufacturing semiconductor circuit structure

KANG CHIH-KAI

Test key structure and method for measuring step height by such test key structure

SUN CHIA-CHEN

Semiconductor circuit structure