Inventor
JUNG HYUN-TAEK
KR24 patents
⚠️ This page may combine multiple inventors who share the name “JUNG HYUN-TAEK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS10090059B2Oct 2, 2018
One time programmable memory and a data writing method thereof
SAMSUNG ELECTRONICS CO LTD13 citations84
US7263020B2Aug 28, 2007
Memory device capable of refreshing data using buffer and refresh method thereof
SAMSUNG ELECTRONICS CO LTD10 citations82
US7187608B2Mar 6, 2007
System and method for controlling the access and refresh of a memory
SAMSUNG ELECTRONICS CO LTD10 citations82
US10803971B2Oct 13, 2020
Device for supporting error correction code and test method thereof
SAMSUNG ELECTRONICS CO LTD3 citations73
US10199118B2Feb 5, 2019
One-time programmable (OTP) memory device for reading multiple fuse bits
SAMSUNG ELECTRONICS CO LTD2 citations73
US11139012B2Oct 5, 2021
Resistive memory device having read currents for a memory cell and a reference cell in opposite directions
SAMSUNG ELECTRONICS CO LTD3 citations72
US10854289B2Dec 1, 2020
Resistive memory device providing reference calibration, and operating method thereof
SAMSUNG ELECTRONICS CO LTD3 citations72
US10777255B2Sep 15, 2020
Control signal generator for sense amplifier and memory device including the control signal generator
SAMSUNG ELECTRONICS CO LTD2 citations72
US10762958B2Sep 1, 2020
Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells
SAMSUNG ELECTRONICS CO LTD4 citations70
US7755966B2Jul 13, 2010
Memory device performing a partial refresh operation based on accessed and/or refreshed memory blocks and method thereof
SAMSUNG ELECTRONICS CO LTD3 citations62
US7376029B2May 20, 2008
Semiconductor memory devices including precharge circuit and methods for precharging
SAMSUNG ELECTRONICS CO LTD2 citations62
US6330199B2Dec 11, 2001
Semiconductor memory device and redundancy circuit, and method of increasing redundancy efficiency
SAMSUNG ELECTRONICS CO LTD4 citations62
US12014763B2Jun 18, 2024
Magnetic junction memory device and writing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations60
US11443791B2Sep 13, 2022
Magnetic junction memory device and writing method thereof
SAMSUNG ELECTRONICS CO LTD0 citations60
US8842483B2Sep 23, 2014
Semiconductor device and method of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations53
US10600466B2Mar 24, 2020
Resistive memory device having reduced chip size and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US10373664B2Aug 6, 2019
Resistive memory device having reduced chip size and operation method thereof
SAMSUNG ELECTRONICS CO LTD0 citations52
US6903955B2Jun 7, 2005
Semiconductor memory device having consistent skew over entire memory core
SAMSUNG ELECTRONICS CO LTD0 citations52
US7271637B2Sep 18, 2007
Circuit and method of controlling a delay of a semiconductor device
SAMSUNG ELECTRONICS CO LTD1 citations51
FINE M TEC CO LTD
3 patentsUS12510938B2Dec 30, 2025
Hinge device of portable terminal having foldable structure
FINE M TEC CO LTD1 citations59
US12591277B2Mar 31, 2026
Hinge device of portable terminal with foldable structure
FINE M TEC CO LTD0 citations47
US12401732B2Aug 26, 2025
Hinge device of portable terminal with foldable structure
FINE M TEC CO LTD0 citations47