P

Inventor

JUNG HYUN-TAEK

KR24 patents
⚠️ This page may combine multiple inventors who share the name “JUNG HYUN-TAEK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US10090059B2Oct 2, 2018

One time programmable memory and a data writing method thereof

SAMSUNG ELECTRONICS CO LTD13 citations84
US7263020B2Aug 28, 2007

Memory device capable of refreshing data using buffer and refresh method thereof

SAMSUNG ELECTRONICS CO LTD10 citations82
US7187608B2Mar 6, 2007

System and method for controlling the access and refresh of a memory

SAMSUNG ELECTRONICS CO LTD10 citations82
US10803971B2Oct 13, 2020

Device for supporting error correction code and test method thereof

SAMSUNG ELECTRONICS CO LTD3 citations73
US10199118B2Feb 5, 2019

One-time programmable (OTP) memory device for reading multiple fuse bits

SAMSUNG ELECTRONICS CO LTD2 citations73
US11139012B2Oct 5, 2021

Resistive memory device having read currents for a memory cell and a reference cell in opposite directions

SAMSUNG ELECTRONICS CO LTD3 citations72
US10854289B2Dec 1, 2020

Resistive memory device providing reference calibration, and operating method thereof

SAMSUNG ELECTRONICS CO LTD3 citations72
US10777255B2Sep 15, 2020

Control signal generator for sense amplifier and memory device including the control signal generator

SAMSUNG ELECTRONICS CO LTD2 citations72
US10762958B2Sep 1, 2020

Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells

SAMSUNG ELECTRONICS CO LTD4 citations70
US7755966B2Jul 13, 2010

Memory device performing a partial refresh operation based on accessed and/or refreshed memory blocks and method thereof

SAMSUNG ELECTRONICS CO LTD3 citations62
US7376029B2May 20, 2008

Semiconductor memory devices including precharge circuit and methods for precharging

SAMSUNG ELECTRONICS CO LTD2 citations62
US6330199B2Dec 11, 2001

Semiconductor memory device and redundancy circuit, and method of increasing redundancy efficiency

SAMSUNG ELECTRONICS CO LTD4 citations62
US12014763B2Jun 18, 2024

Magnetic junction memory device and writing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations60
US11443791B2Sep 13, 2022

Magnetic junction memory device and writing method thereof

SAMSUNG ELECTRONICS CO LTD0 citations60
US8842483B2Sep 23, 2014

Semiconductor device and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations53
US10600466B2Mar 24, 2020

Resistive memory device having reduced chip size and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US10373664B2Aug 6, 2019

Resistive memory device having reduced chip size and operation method thereof

SAMSUNG ELECTRONICS CO LTD0 citations52
US6903955B2Jun 7, 2005

Semiconductor memory device having consistent skew over entire memory core

SAMSUNG ELECTRONICS CO LTD0 citations52
US7271637B2Sep 18, 2007

Circuit and method of controlling a delay of a semiconductor device

SAMSUNG ELECTRONICS CO LTD1 citations51

FINE M TEC CO LTD

3 patents

LEE SANG-SEOK

1 patent

PYO SUK-SOO

1 patent