Inventor

AHN SU-JIN

KR30 patents

⚠️ This page may combine multiple inventors who share the name “AHN SU-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

AHN SU-JIN

SAMSUNG ELECTRONICS CO LTD

Phase-change memory and method having restore function

Phase-change random access memory device and method of operating the same

Set programming methods and write driver circuits for a phase-change memory array

3-Dimensional semiconductor memory device and operating method thereof

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-change memory device having a barrier layer and manufacturing method

Vertical memory devices

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Set programming methods and write driver circuits for a phase-change memory array

Semiconductor memory devices having offset transistors and methods of fabricating the same

PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same

Semiconductor memory device comprising memory having active restoration function

Methods of forming phase-changeable memory devices

Phase-changeable memory devices

Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof

Vertical memory devices

Non-volatile memory devices having improved operational characteristics

Vertical semiconductor devices and methods of manufacturing the same

PRAMS having a plurality of active regions located vertically in sequence and methods of forming the same

Methods of forming a semiconductor device that allow patterns in different regions that have different pitches to be connected

Memory cell transistor having different source/drain junction profiles connected to DC node and BC node and manufacturing method thereof

Methods of fabricating semiconductor devices with scalable two transistor memory cells

Vertical semiconductor devices and methods of manufacturing the same

Vertical semiconductor devices and methods of manufacturing the same

AHN SU-JIN

Magnetic random access memory device and method of writing data therein

CHOI CHANG MIN

Non-volatile memory device and program method of a non-volatile memory device

YUHAN CORP

Fusion protein comprising CCL3 variant and use thereof

SAMSUNG ELECTRONICS COT LTD

Semiconductor devices with scalable two transistor memory cells

JEONG WON-CHEOL

Non-volatile memory devices having charge storage layers at intersecting locations of word lines and active regions

HONG SANG-HYUN

Methods of fabricating semiconductor device