P

Inventor

CHUNG HYUN-WOO

KR43 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HYUN-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

19 patents
US10490444B2Nov 26, 2019

Semiconductor devices having an air gap

SAMSUNG ELECTRONICS CO LTD12 citations92
US7977725B2Jul 12, 2011

Integrated circuit semiconductor device including stacked level transistors

SAMSUNG ELECTRONICS CO LTD20 citations92
US8373214B2Feb 12, 2013

Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations84
US8053316B2Nov 8, 2011

Method of fabricating vertical channel transistor

SAMSUNG ELECTRONICS CO LTD9 citations84
US7902026B2Mar 8, 2011

Method of fabricating semiconductor device having vertical channel transistor

SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011

Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate

SAMSUNG ELECTRONICS CO LTD10 citations84
US9184136B2Nov 10, 2015

Semiconductor devices and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US7999309B2Aug 16, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations74
US9117696B2Aug 25, 2015

Semiconductor devices having balancing capacitor and methods of forming the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US9087728B2Jul 21, 2015

Semiconductor device

SAMSUNG ELECTRONICS CO LTD5 citations73
US11764107B2Sep 19, 2023

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations72
US10910261B2Feb 2, 2021

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US8344437B2Jan 1, 2013

Semiconductor device with vertical channel transistor

SAMSUNG ELECTRONICS CO LTD3 citations63
US8384141B2Feb 26, 2013

Semiconductor device with vertical channel transistor

SAMSUNG ELECTRONICS CO LTD2 citations62
US8372715B2Feb 12, 2013

Vertical channel transistors and methods for fabricating vertical channel transistors

SAMSUNG ELECTRONICS CO LTD2 citations62
US9449677B2Sep 20, 2016

Methods of operating and forming semiconductor devices including dual-gate electrode structures

SAMSUNG ELECTRONICS CO LTD2 citations61
US8343831B2Jan 1, 2013

Semiconductor device and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52
US7863174B2Jan 4, 2011

Vertical pillar transistor

SAMSUNG ELECTRONICS CO LTD0 citations42

KIM HUI-JUNG

6 patents

KIM KANG-UK

3 patents

CHUNG HYUN-WOO

3 patents

YOON JAE-MAN

2 patents

KIM JI-YOUNG

2 patents

CHO YOUNG-SEUNG

2 patents

CHOI BYOUNGDEOG

1 patent

KIM DAE-IK

1 patent

KIM DAEIK

1 patent

YU HAK-SOO

1 patent

CHOI JAY-BOK

1 patent

HWANG YOO-SANG

1 patent