Inventor
CHUNG HYUN-WOO
KR43 patents
⚠️ This page may combine multiple inventors who share the name “CHUNG HYUN-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS10490444B2Nov 26, 2019
Semiconductor devices having an air gap
SAMSUNG ELECTRONICS CO LTD12 citations92
US7977725B2Jul 12, 2011
Integrated circuit semiconductor device including stacked level transistors
SAMSUNG ELECTRONICS CO LTD20 citations92
US8373214B2Feb 12, 2013
Semiconductor devices with buried bit lines and methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD7 citations84
US8053316B2Nov 8, 2011
Method of fabricating vertical channel transistor
SAMSUNG ELECTRONICS CO LTD9 citations84
US7902026B2Mar 8, 2011
Method of fabricating semiconductor device having vertical channel transistor
SAMSUNG ELECTRONICS CO LTD12 citations84
US7872302B2Jan 18, 2011
Semiconductor device having vertical transistor formed on an active pattern protruding from a substrate
SAMSUNG ELECTRONICS CO LTD10 citations84
US9184136B2Nov 10, 2015
Semiconductor devices and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD11 citations82
US7999309B2Aug 16, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD6 citations74
US7943978B2May 17, 2011
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations74
US9117696B2Aug 25, 2015
Semiconductor devices having balancing capacitor and methods of forming the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US9087728B2Jul 21, 2015
Semiconductor device
SAMSUNG ELECTRONICS CO LTD5 citations73
US11764107B2Sep 19, 2023
Methods of manufacturing semiconductor devices
SAMSUNG ELECTRONICS CO LTD2 citations72
US10910261B2Feb 2, 2021
Semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US8344437B2Jan 1, 2013
Semiconductor device with vertical channel transistor
SAMSUNG ELECTRONICS CO LTD3 citations63
US8384141B2Feb 26, 2013
Semiconductor device with vertical channel transistor
SAMSUNG ELECTRONICS CO LTD2 citations62
US8372715B2Feb 12, 2013
Vertical channel transistors and methods for fabricating vertical channel transistors
SAMSUNG ELECTRONICS CO LTD2 citations62
US9449677B2Sep 20, 2016
Methods of operating and forming semiconductor devices including dual-gate electrode structures
SAMSUNG ELECTRONICS CO LTD2 citations61
US8343831B2Jan 1, 2013
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7863174B2Jan 4, 2011
Vertical pillar transistor
SAMSUNG ELECTRONICS CO LTD0 citations42
KIM HUI-JUNG
6 patentsUS8552472B2Oct 8, 2013
Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same
KIM HUI-JUNG20 citations92
US8304824B2Nov 6, 2012
Semiconductor device comprising buried word lines
KIM HUI-JUNG8 citations83
US9111960B2Aug 18, 2015
Semiconductor devices with vertical channel transistors
KIM HUI-JUNG5 citations72
US8274112B2Sep 25, 2012
Semiconductor memory device having pillar structures
KIM HUI-JUNG5 citations62
US8623724B2Jan 7, 2014
Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
US8247856B2Aug 21, 2012
Semiconductor device including a capacitor electrically connected to a vertical pillar transistor
KIM HUI-JUNG1 citations51
KIM KANG-UK
3 patentsUS8294131B2Oct 23, 2012
Integrated circuit devices including low-resistivity conductive patterns in recessed regions
KIM KANG-UK14 citations83
US8283229B2Oct 9, 2012
Methods of fabricating vertical channel transistors
KIM KANG-UK7 citations83
US8786009B2Jul 22, 2014
Substrate structures including buried wiring, semiconductor devices including substrate structures, and method of fabricating the same
KIM KANG-UK1 citations51
CHUNG HYUN-WOO
3 patentsUS8324673B2Dec 4, 2012
Semiconductor memory devices and methods of forming the same
CHUNG HYUN-WOO8 citations82
US9165935B2Oct 20, 2015
Semiconductor devices and methods for manufacturing the same
CHUNG HYUN-WOO4 citations70
US8766354B2Jul 1, 2014
Semiconductor devices including vertical channel transistors and methods of manufacturing the same
CHUNG HYUN-WOO3 citations60