Inventor
VIANELLO ELISA
FR32 patents
⚠️ This page may combine multiple inventors who share the name “VIANELLO ELISA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
28 patentsUS10388376B2Aug 20, 2019
Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory
COMMISSARIAT ENERGIE ATOMIQUE22 citations90
US9722177B2Aug 1, 2017
Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal
COMMISSARIAT ENERGIE ATOMIQUE9 citations82
US10540099B2Jan 21, 2020
System for managing the wear of an electronic memory
COMMISSARIAT ENERGIE ATOMIQUE2 citations73
US11017293B2May 25, 2021
Method of programming an artificial neuron network
COMMISSARIAT ENERGIE ATOMIQUE2 citations72
US10861545B2Dec 8, 2020
Programmable artificial neuron and associated programming method
COMMISSARIAT ENERGIE ATOMIQUE6 citations69
US9431607B2Aug 30, 2016
Metal-oxide-based conductive-bridging random access memory (CBRAM) having the solid electrolyte doped with a second metal
COMMISSARIAT ENERGIE ATOMIQUE4 citations69
US10559355B2Feb 11, 2020
Device and method for writing data to a resistive memory
COMMISSARIAT ENERGIE ATOMIQUE1 citations62
US11189792B2Nov 30, 2021
Oxide-based resistive non-volatile memory cell and method for manufacturing same
COMMISSARIAT ENERGIE ATOMIQUE1 citations58
US10985317B2Apr 20, 2021
Device for selecting a memory cell
COMMISSARIAT ENERGIE ATOMIQUE0 citations58
US10741757B2Aug 11, 2020
Process for the manufacture of a recurrent neural network calculator
COMMISSARIAT ENERGIE ATOMIQUE1 citations58
US11489012B2Nov 1, 2022
Method of producing a recurrent neural network computer
COMMISSARIAT ENERGIE ATOMIQUE0 citations54
US12394464B2Aug 19, 2025
Hybrid FeRAM/OxRAM data storage circuit
COMMISSARIAT ENERGIE ATOMIQUE1 citations53
US11348011B2May 31, 2022
Method for unsupervised sorting in real time of action potentials of a plurality of biological neurons
COMMISSARIAT ENERGIE ATOMIQUE1 citations53
US10074802B2Sep 11, 2018
Device with transistors distributed over several superimposed levels integrating a resistive memory
COMMISSARIAT ENERGIE ATOMIQUE1 citations51
US12363918B2Jul 15, 2025
Method for co-manufacturing a ferroelectric memory and an OxRAM resistive memory and device co-integrating a ferroelectric memory and an OxRAM resistive memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11145812B2Oct 12, 2021
Resistive random access memory device
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12136022B2Nov 5, 2024
Method of training a logistic regression classifier with a resistive random access memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations48
US11217307B2Jan 4, 2022
Circuit and method for programming resistive memory cells
COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US12205020B2Jan 21, 2025
Bayesian neural network with resistive memory hardware accelerator and method for programming the same
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US12022751B2Jun 25, 2024
Method for fabricating molds for lithography by nano-imprinting
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US11551073B2Jan 10, 2023
Modulation device and method, artificial synapse comprising said modulation device, short term plasticity method in an artificial neural network comprising said artificial synapse
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US11960036B2Apr 16, 2024
Device and method for processing signals from a set of ultrasonic transducers
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10839902B2Nov 17, 2020
Method for programming a resistive memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10475509B2Nov 12, 2019
Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10235058B2Mar 19, 2019
System and method for managing wear of an electronic memory
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US12374397B2Jul 29, 2025
Memory cell, electronic circuit comprising such cells, related programming method and multiplication and accumulation method
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US10446564B2Oct 15, 2019
Non-volatile memory allowing a high integration density
COMMISSARIAT ENERGIE ATOMIQUE0 citations39
US10755754B2Aug 25, 2020
Analog method for programming a phase change memory cell by means of identical electrical pulses
COMMISSARIAT ENERGIE ATOMIQUE0 citations34