Inventor
MOR YI-SHIEN
TW39 patents
⚠️ This page may combine multiple inventors who share the name “MOR YI-SHIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
16 patentsUS9960160B2May 1, 2018
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9601388B2Mar 21, 2017
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9460970B2Oct 4, 2016
Control fin heights in FinFET structures
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US10692769B2Jun 23, 2020
Fin critical dimension loading optimization
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10748896B2Aug 18, 2020
Method for fabricating semiconductor device including contact bars having narrower portions
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10366989B2Jul 30, 2019
Semiconductor device having a contact bar over an S/D structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11004747B2May 11, 2021
Fin critical dimension loading optimization
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12015030B2Jun 18, 2024
Gate stacks for semiconductor devices of different conductivity types
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469227B2Oct 11, 2022
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289481B2Mar 29, 2022
Single metal that performs N work function and P work function in a high-K/metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10529862B2Jan 7, 2020
Semiconductor device and method of forming semiconductor fin thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11749679B2Sep 5, 2023
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11075199B2Jul 27, 2021
Method of forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12588229B2Mar 24, 2026
Gate-top dielectric structure for self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10204905B2Feb 12, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9466528B2Oct 11, 2016
Method of making a structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48
TAIWAN SEMICONDUCTOR MFG
10 patentsUS8383502B2Feb 26, 2013
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG11 citations93
US7378713B2May 27, 2008
Semiconductor devices with dual-metal gate structures and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG37 citations92
US8841731B2Sep 23, 2014
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG5 citations84
US8349680B2Jan 8, 2013
High-k metal gate CMOS patterning method
TAIWAN SEMICONDUCTOR MFG9 citations84
US8048752B2Nov 1, 2011
Spacer shape engineering for void-free gap-filling process
TAIWAN SEMICONDUCTOR MFG9 citations84
US8003507B2Aug 23, 2011
Method of integrating high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG8 citations84
US8975698B2Mar 10, 2015
Control fin heights in FinFET structures
TAIWAN SEMICONDUCTOR MFG4 citations72
US9257426B2Feb 9, 2016
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG2 citations63
US7382028B2Jun 3, 2008
Method for forming silicide and semiconductor device formed thereby
TAIWAN SEMICONDUCTOR MFG2 citations63
US7947591B2May 24, 2011
Semiconductor devices with dual-metal gate structures and fabrication methods thereof
TAIWAN SEMICONDUCTOR MFG5 citations62
UNITED MICROELECTRONICS CORP
7 patentsUS6521547B1Feb 18, 2003
Method of repairing a low dielectric constant material layer
UNITED MICROELECTRONICS CORP548 citations99
US6635967B2Oct 21, 2003
Air gap semiconductor structure and method of manufacture
UNITED MICROELECTRONICS CORP42 citations96
US6316347B1Nov 13, 2001
Air gap semiconductor structure and method of manufacture
UNITED MICROELECTRONICS CORP59 citations96
US6583067B2Jun 24, 2003
Method of avoiding dielectric layer deterioration with a low dielectric constant
UNITED MICROELECTRONICS CORP32 citations92
US6498070B2Dec 24, 2002
Air gap semiconductor structure and method of manufacture
UNITED MICROELECTRONICS CORP27 citations92
US6423652B1Jul 23, 2002
Post-processing treatment of low dielectric constant material
UNITED MICROELECTRONICS CORP21 citations92
US6979654B2Dec 27, 2005
Method of avoiding dielectric layer deterioation with a low dielectric constant during a stripping process
UNITED MICROELECTRONICS CORP0 citations52