Inventor
CHEN FANG-CHENG
TW26 patents
⚠️ This page may combine multiple inventors who share the name “CHEN FANG-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
17 patentsUS6265317B1Jul 24, 2001
Top corner rounding for shallow trench isolation
TAIWAN SEMICONDUCTOR MFG249 citations99
US6869868B2Mar 22, 2005
Method of fabricating a MOSFET device with metal containing gate structures
TAIWAN SEMICONDUCTOR MFG134 citations97
US6174818B1Jan 16, 2001
Method of patterning narrow gate electrode
TAIWAN SEMICONDUCTOR MFG77 citations96
US6001538ADec 14, 1999
Damage free passivation layer etching process
TAIWAN SEMICONDUCTOR MFG72 citations93
US7122412B2Oct 17, 2006
Method of fabricating a necked FINFET device
TAIWAN SEMICONDUCTOR MFG33 citations92
US6867084B1Mar 15, 2005
Gate structure and method of forming the gate dielectric with mini-spacer
TAIWAN SEMICONDUCTOR MFG31 citations92
US6500727B1Dec 31, 2002
Silicon shallow trench etching with round top corner by photoresist-free process
TAIWAN SEMICONDUCTOR MFG25 citations92
US6051505AApr 18, 2000
Plasma etch method for forming metal-fluoropolymer residue free vias through silicon containing dielectric layers
TAIWAN SEMICONDUCTOR MFG31 citations89
US7511349B2Mar 31, 2009
Contact or via hole structure with enlarged bottom critical dimension
TAIWAN SEMICONDUCTOR MFG17 citations84
US6235440B1May 22, 2001
Method to control gate CD
TAIWAN SEMICONDUCTOR MFG11 citations74
US6828237B1Dec 7, 2004
Sidewall polymer deposition method for forming a patterned microelectronic layer
TAIWAN SEMICONDUCTOR MFG8 citations72
US6900104B1May 31, 2005
Method of forming offset spacer manufacturing for critical dimension precision
TAIWAN SEMICONDUCTOR MFG6 citations63
US6969688B2Nov 29, 2005
Wet etchant composition and method for etching HfO2 and ZrO2
TAIWAN SEMICONDUCTOR MFG5 citations58
US7306746B2Dec 11, 2007
Critical dimension control in a semiconductor fabrication process
TAIWAN SEMICONDUCTOR MFG6 citations57
US9129842B2Sep 8, 2015
Formation of silicide contacts in semiconductor devices
TAIWAN SEMICONDUCTOR MFG0 citations52
USRE39913ENov 6, 2007
Method to control gate CD
TAIWAN SEMICONDUCTOR MFG0 citations52
US7307009B2Dec 11, 2007
Phosphoric acid free process for polysilicon gate definition
TAIWAN SEMICONDUCTOR MFG0 citations50
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS10797031B2Oct 6, 2020
Semiconductor package
TAIWAN SEMICONDUCTOR MFG CO LTD45 citations97
US10333623B1Jun 25, 2019
Optical transceiver
TAIWAN SEMICONDUCTOR MFG CO LTD91 citations97
US9653594B2May 16, 2017
Semiconductor device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US10914895B2Feb 9, 2021
Package structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US11830861B2Nov 28, 2023
Semiconductor package
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11152249B2Oct 19, 2021
Methods of forming FinFET devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081563B2Aug 3, 2021
Formation of silicide contacts in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10658225B2May 19, 2020
FinFET devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52