Inventor
CHEN MING-SHANG
TW34 patents
⚠️ This page may combine multiple inventors who share the name “CHEN MING-SHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
28 patentsUS5912845AJun 15, 1999
Method and circuit for substrate current induced hot e- injection (SCIHE) approach for VT convergence at low VCC voltage
MACRONIX INT CO LTD49 citations96
US6363013B1Mar 26, 2002
Auto-stopped page soft-programming method with voltage limited component
MACRONIX INT CO LTD68 citations95
US6562682B1May 13, 2003
Method for forming gate
MACRONIX INT CO LTD23 citations92
US6031766AFeb 29, 2000
Method and circuit for substrate current induced hot e-injection (SCIHE) approach for VT convergence at low Vcc voltage
MACRONIX INT CO LTD34 citations92
US7435648B2Oct 14, 2008
Methods of trench and contact formation in memory cells
MACRONIX INT CO LTD29 citations91
US6614687B2Sep 2, 2003
Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM
MACRONIX INT CO LTD24 citations91
US6166955ADec 26, 2000
Apparatus and method for programming of flash EPROM memory
MACRONIX INT CO LTD28 citations91
US7399674B2Jul 15, 2008
Method of fabricating NAND-type flash EEPROM without field oxide isolation
MACRONIX INT CO LTD12 citations84
US7889556B2Feb 15, 2011
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations82
US6960506B2Nov 1, 2005
Method of fabricating a memory device having a self-aligned contact
MACRONIX INT CO LTD8 citations73
US6620714B2Sep 16, 2003
Method for reducing oxidation encroachment of stacked gate layer
MACRONIX INT CO LTD9 citations73
US7668010B2Feb 23, 2010
Flash memory having insulating liners between source/drain lines and channels
MACRONIX INT CO LTD7 citations72
US7214983B2May 8, 2007
Non-volatile memory and fabricating method thereof
MACRONIX INT CO LTD8 citations72
US11074975B1Jul 27, 2021
Non-volatile register and implementation of non-volatile register
MACRONIX INT CO LTD0 citations62
US7486534B2Feb 3, 2009
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD2 citations62
US7067374B2Jun 27, 2006
Manufacturing methods and structures of memory device
MACRONIX INT CO LTD5 citations62
US6723646B2Apr 20, 2004
Method for controlling and monitoring a chemical mechanical polishing process
MACRONIX INT CO LTD6 citations60
US6552360B1Apr 22, 2003
Method and circuit layout for reducing post chemical mechanical polishing defect count
MACRONIX INT CO LTD2 citations60
US7971177B2Jun 28, 2011
Design tool for charge trapping memory using simulated programming operations
MACRONIX INT CO LTD0 citations52
US7847336B2Dec 7, 2010
Method of fabricating NAND-type flash EEPROMS without field oxide isolation
MACRONIX INT CO LTD0 citations52
US6677211B2Jan 13, 2004
Method for eliminating polysilicon residue
MACRONIX INT CO LTD1 citations52
USRE46970EJul 24, 2018
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD0 citations51
US9036393B2May 19, 2015
Diode-less array for one-time programmable memory
MACRONIX INT CO LTD0 citations51
US7888272B2Feb 15, 2011
Methods for manufacturing memory and logic devices using the same process without the need for additional masks
MACRONIX INT CO LTD0 citations51
US7776690B2Aug 17, 2010
Method of forming a contact on a semiconductor device
MACRONIX INT CO LTD0 citations50
US7666784B2Feb 23, 2010
Methods of trench and contact formation in memory cells
MACRONIX INT CO LTD0 citations50
US7271062B2Sep 18, 2007
Non-volatile memory cell and fabricating method thereof and method of fabricating non-volatile memory
MACRONIX INT CO LTD1 citations50
US7592036B2Sep 22, 2009
Method for manufacturing NAND flash memory
MACRONIX INT CO LTD1 citations47