Inventor
LIU CHI-CHUN
US103 patents
⚠️ This page may combine multiple inventors who share the name “LIU CHI-CHUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
45 patentsUS8853085B1Oct 7, 2014
Grapho-epitaxy DSA process with dimension control of template pattern
IBM47 citations97
US9576817B1Feb 21, 2017
Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
IBM40 citations94
US9536750B1Jan 3, 2017
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
IBM14 citations93
US9831324B1Nov 28, 2017
Self-aligned inner-spacer replacement process using implantation
IBM14 citations92
US8859433B2Oct 14, 2014
DSA grapho-epitaxy process with etch stop material
IBM21 citations91
US10461154B1Oct 29, 2019
Bottom isolation for nanosheet transistors on bulk substrate
IBM9 citations84
US10410875B2Sep 10, 2019
Alternating hardmasks for tight-pitch line formation
IBM4 citations84
US10199464B2Feb 5, 2019
Techniques for VFET top source/drain epitaxy
IBM6 citations84
US9852260B2Dec 26, 2017
Method and recording medium of reducing chemoepitaxy directed self-assembled defects
IBM6 citations84
US9768059B1Sep 19, 2017
High-chi block copolymers for interconnect structures by directed self-assembly
IBM12 citations84
US9368350B1Jun 14, 2016
Tone inverted directed self-assembly (DSA) fin patterning
IBM12 citations84
US10256320B1Apr 9, 2019
Vertical field-effect-transistors having a silicon oxide layer with controlled thickness
IBM11 citations83
US10157789B2Dec 18, 2018
Via formation using sidewall image transfer process to define lateral dimension
IBM12 citations83
US10103022B2Oct 16, 2018
Alternating hardmasks for tight-pitch line formation
IBM8 citations83
US10090378B1Oct 2, 2018
Efficient metal-insulator-metal capacitor
IBM4 citations83
US9632408B1Apr 25, 2017
Graphoepitaxy directed self assembly
IBM15 citations83
US9490168B1Nov 8, 2016
Via formation using sidewall image transfer process to define lateral dimension
IBM10 citations83
US8715917B2May 6, 2014
Simultaneous photoresist development and neutral polymer layer formation
IBM8 citations81
US11600325B2Mar 7, 2023
Non volatile resistive memory logic device
IBM2 citations73
US11139242B2Oct 5, 2021
Via-to-metal tip connections in multi-layer chips
IBM2 citations73
US10892328B2Jan 12, 2021
Source/drain extension regions and air spacers for nanosheet field-effect transistor structures
IBM5 citations73
US10833180B2Nov 10, 2020
Self-aligned tunneling field effect transistors
IBM2 citations73
US10755976B2Aug 25, 2020
Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch
IBM3 citations73
US10606980B2Mar 31, 2020
Method and recording medium of reducing chemoepitaxy directed self-assembled defects
IBM1 citations73
US10475905B2Nov 12, 2019
Techniques for vertical FET gate length control
IBM4 citations73
US10381267B2Aug 13, 2019
Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch
IBM3 citations73
US10312103B2Jun 4, 2019
Alternating hardmasks for tight-pitch line formation
IBM1 citations73
US10242881B2Mar 26, 2019
Self-aligned single dummy fin cut with tight pitch
IBM3 citations73
US10170591B2Jan 1, 2019
Self-aligned finFET formation
IBM1 citations73
US10134762B2Nov 20, 2018
Embedded security circuit formed by directed self-assembly
IBM2 citations73
US10114921B2Oct 30, 2018
Method and recording medium of reducing chemoepitaxy directed self-assembled defects
IBM3 citations73
US9947548B2Apr 17, 2018
Self-aligned single dummy fin cut with tight pitch
IBM2 citations73
US9917106B2Mar 13, 2018
Embedded security circuit formed by directed self-assembly
IBM2 citations73
US9911603B2Mar 6, 2018
Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
IBM2 citations73
US9659824B2May 23, 2017
Graphoepitaxy directed self-assembly process for semiconductor fin formation
IBM2 citations73
US10580652B2Mar 3, 2020
Alternating hardmasks for tight-pitch line formation
IBM2 citations72
US10374034B1Aug 6, 2019
Undercut control in isotropic wet etch processes
IBM5 citations72
US10059820B2Aug 28, 2018
Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
IBM3 citations72
US9810980B1Nov 7, 2017
Graphoepitaxy directed self assembly
IBM3 citations72
US11239077B2Feb 1, 2022
Litho-etch-litho-etch with self-aligned blocks
IBM2 citations71
US9738765B2Aug 22, 2017
Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
IBM4 citations71
US11329001B2May 10, 2022
Embedded chip identification formed by directed self-assembly
IBM0 citations63
US11004737B2May 11, 2021
Field effect device with reduced capacitance and resistance in source/drain contacts at reduced gate pitch
IBM0 citations63
US10916630B2Feb 9, 2021
Nanosheet devices with improved electrostatic integrity
IBM0 citations63
US9929020B2Mar 27, 2018
Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
IBM1 citations63
GUILLORN MICHAEL A
2 patentsTESSERA INC
2 patentsTESSERA LLC
1 patentShowing the top 50 of 103 patents by PatentIndex Score.