Inventor

LERNER RALF

DE29 patents

⚠️ This page may combine multiple inventors who share the name “LERNER RALF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LERNER RALF

LERNER RALF

Production of isolation trenches with different sidewall dopings

MOS-power transistors with edge termination with small area requirement

Semiconductor structure for fabricating a handle wafer contact in a trench insulated SOI disc

DMOS transistor having an increased breakdown voltage and method for production

Semiconductor component with isolation trench intersections

Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces

Method for the construction of vertical power transistors with differing powers by combination of pre-defined part pieces

High-voltage power transistor using SOI technology

Layout method for vertical power transistors having a variable channel width

X FAB SEMICONDUCTOR FOUNDRIES

Test structure for electrically verifying the depths of trench-etching in an SOI wafer, and associated working methods

Integrated circuit having a component provided by transfer print and method for making the integrated circuit

Production of a carrier wafer contact in trench insulated integrated SOI circuits having high-voltage components

Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material

Passivation of deep isolating separating trenches with sunk covering layers

Trench insulation in substrate disks comprising logic semiconductors and power semiconductors

Soi vertical bipolar power component

Two-step oxidation process for semiconductor wafers

Creation of dielectrically insulating soi-technlogical trenches comprising rounded edges for allowing higher voltages

X FAB SEMICONDUCTOR FOUNDRIES GMBH

Trench insulation structure with enlarged electrically conductive side wall

Geometrically shaped components in an assembly for a transfer print and associated methods

Trench insulation structure with enlarged electrically conductive side wall

Semiconductor substrate and method for producing a semiconductor substrate

Method of manufacturing semiconductor devices to increase yield in micro-transfer printing

Geometrically shaped components in an assembly for a transfer print and associated methods

Method for a transfer print between substrates

KITTLER GABRIEL

Method for producing silicon semiconductor wafers comprising a layer for integrating III-V semiconductor components

Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement

MELEXIS TECHNOLOGIES NV

Trench capacitors

X FAB GLOBAL SERVICES GMBH

Semiconductor device along with multi-functional units and method for manufacturing a semiconductor device