Inventor
TSAI FU-HUAN
TW32 patents
⚠️ This page may combine multiple inventors who share the name “TSAI FU-HUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
31 patentsUS11990474B2May 21, 2024
Method of making a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11552076B2Jan 10, 2023
Method of making a semiconductor device, semiconductor device and ring oscillator
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10991687B2Apr 27, 2021
FinFET varactor with low threshold voltage and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10741553B2Aug 11, 2020
Method of making a high speed semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10522535B2Dec 31, 2019
FinFET varactor with low threshold voltage and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10431582B2Oct 1, 2019
High speed semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11063559B2Jul 13, 2021
High-implant channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9947701B2Apr 17, 2018
Low noise device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12464787B2Nov 4, 2025
Circuit structure and method for reducing electronic noises
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191811B2Jan 7, 2025
High-implant channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11791773B2Oct 17, 2023
High-implant channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11646312B2May 9, 2023
Buried channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11605709B2Mar 14, 2023
Circuit structure and method for reducing electronic noises
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532614B2Dec 20, 2022
FinFET varactor with low threshold voltage and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094694B2Aug 17, 2021
Buried channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830889B2Nov 28, 2023
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11094723B2Aug 17, 2021
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11011556B2May 18, 2021
Method of making a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11088136B2Aug 10, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10991688B2Apr 27, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12356684B2Jul 8, 2025
Semiconductor structure having asymmetric source/drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11855145B2Dec 26, 2023
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10868116B2Dec 15, 2020
Circuit structure and method for reducing electronic noises
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10522534B2Dec 31, 2019
FinFET varactor with low threshold voltage and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10141429B2Nov 27, 2018
FinFET having isolation structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9653542B2May 16, 2017
FinFET having isolation structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10529711B2Jan 7, 2020
Buried channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9761584B2Sep 12, 2017
Buried channel semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10622351B2Apr 14, 2020
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10535686B2Jan 14, 2020
Semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10157916B2Dec 18, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations48