P

Inventor

LIAN JIAN-JOU

TW40 patents
⚠️ This page may combine multiple inventors who share the name “LIAN JIAN-JOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

39 patents
US11600521B2Mar 7, 2023

Surface modification layer for conductive feature formation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US10312106B2Jun 4, 2019

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10179878B2Jan 15, 2019

Wet etch chemistry for selective silicon etch

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11522083B2Dec 6, 2022

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11201084B2Dec 14, 2021

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699944B2Jun 30, 2020

Surface modification layer for conductive feature formation

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10483108B2Nov 19, 2019

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10676668B2Jun 9, 2020

Wet etch chemistry for selective silicon etch

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12369348B2Jul 22, 2025

Fin Field-Effect Transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347724B2Jul 1, 2025

Surface modification layer for conductive feature formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317525B2May 27, 2025

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308248B2May 20, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183823B2Dec 31, 2024

Fin field-effect transistor with a gate structure having a dielectric protection layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080556B2Sep 3, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11996470B2May 28, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990339B2May 21, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978801B2May 7, 2024

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942362B2Mar 26, 2024

Surface modification layer for conductive feature formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901441B2Feb 13, 2024

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855193B2Dec 26, 2023

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817330B2Nov 14, 2023

Method for processing substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749753B2Sep 5, 2023

Methods of forming a semiconductor device with a gate structure having a dielectric protection layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735425B2Aug 22, 2023

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735426B2Aug 22, 2023

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11588041B2Feb 21, 2023

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398391B2Jul 26, 2022

Substrate processing apparatus and method for processing substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11378882B2Jul 5, 2022

Chemical composition for tri-layer removal

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11309190B2Apr 19, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11309185B2Apr 19, 2022

Fin field-effect transistor and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227940B2Jan 18, 2022

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11101135B2Aug 24, 2021

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081350B2Aug 3, 2021

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10312073B2Jun 4, 2019

Selective removal of carbon-containing and nitrogen-containing silicon residues

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12362227B2Jul 15, 2025

Method for improving profile of interconnect structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11848239B2Dec 19, 2023

Patterning method and structures resulting therefrom

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10867803B2Dec 15, 2020

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10761423B2Sep 1, 2020

Chemical composition for tri-layer removal

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10529572B2Jan 7, 2020

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12237400B2Feb 25, 2025

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

TAIWAN SEMICONDUTOR MFG COMPANY LTD

1 patent