Inventor
LIAN JIAN-JOU
TW40 patents
⚠️ This page may combine multiple inventors who share the name “LIAN JIAN-JOU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
39 patentsUS11600521B2Mar 7, 2023
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations86
US10312106B2Jun 4, 2019
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10179878B2Jan 15, 2019
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations82
US11522083B2Dec 6, 2022
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11201084B2Dec 14, 2021
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10699944B2Jun 30, 2020
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10483108B2Nov 19, 2019
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10676668B2Jun 9, 2020
Wet etch chemistry for selective silicon etch
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12369348B2Jul 22, 2025
Fin Field-Effect Transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347724B2Jul 1, 2025
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12317525B2May 27, 2025
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12308248B2May 20, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183823B2Dec 31, 2024
Fin field-effect transistor with a gate structure having a dielectric protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080556B2Sep 3, 2024
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11996470B2May 28, 2024
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11990339B2May 21, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11978801B2May 7, 2024
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942362B2Mar 26, 2024
Surface modification layer for conductive feature formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901441B2Feb 13, 2024
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11855193B2Dec 26, 2023
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11817330B2Nov 14, 2023
Method for processing substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749753B2Sep 5, 2023
Methods of forming a semiconductor device with a gate structure having a dielectric protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735425B2Aug 22, 2023
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735426B2Aug 22, 2023
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11588041B2Feb 21, 2023
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398391B2Jul 26, 2022
Substrate processing apparatus and method for processing substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11378882B2Jul 5, 2022
Chemical composition for tri-layer removal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11309190B2Apr 19, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11309185B2Apr 19, 2022
Fin field-effect transistor and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227940B2Jan 18, 2022
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11101135B2Aug 24, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081350B2Aug 3, 2021
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10312073B2Jun 4, 2019
Selective removal of carbon-containing and nitrogen-containing silicon residues
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12362227B2Jul 15, 2025
Method for improving profile of interconnect structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11848239B2Dec 19, 2023
Patterning method and structures resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10867803B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10761423B2Sep 1, 2020
Chemical composition for tri-layer removal
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10529572B2Jan 7, 2020
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12237400B2Feb 25, 2025
Method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51