Inventor

LIN CHUN-NENG

TW44 patents

⚠️ This page may combine multiple inventors who share the name “LIN CHUN-NENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN CHUN-NENG

TAIWAN SEMICONDUCTOR MFG CO LTD

Fin field-effect transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

Semiconductor device and method of manufacture using a contact etch stop layer (CESL) breakthrough process

Method of breaking through etch stop layer

Fin field-effect transistor and method of forming the same

Fin Field-Effect Transistor device and method of forming the same

Fin field-effect transistor device and method of forming the same

Semiconductor device and method of manufacture

Fin field-effect transistor device having hybrid work function layer stack

Fin field-effect transistor with a gate structure having a dielectric protection layer

Semiconductor device and method of manufacture

Fin field-effect transistor and method of forming the same

Semiconductor device and method of manufacture

Fin field-effect transistor device having hybrid work function layer stack

Fin Field-Effect transistor and method of forming the same

Fin field-effect transistor device having hybrid work function layer stack

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Fin field-effect transistor and method of forming the same

Fin field-effect transistor device and method of forming the same

Method for processing substrate

Methods of forming a semiconductor device with a gate structure having a dielectric protection layer

Fin field-effect transistor and method of forming the same

Fin field-effect transistor and method of forming the same

Substrate processing apparatus and method for processing substrate

Fin field-effect transistor device having hybrid work function layer stack

Fin field-effect transistor and method of forming the same

Semiconductor device and method of manufacture

Fin field-effect transistor device and method of forming the same

Semiconductor structure

Method of breaking through etch stop layer

Conductive feature of a semiconductor device

Oxidation to mitigate dry etch and/or wet etch fluorine residue

Conductive feature of a semiconductor device and method of forming same

Method of breaking through etch stop layer

Etch method for interconnect structure

Connecting structure and method for forming the same

FinFET device with T-shaped fin

FinFET device with T-shaped fin and method for forming the same

Method for improving profile of interconnect structure

Patterning method and structures resulting therefrom

Method of forming semiconductor device

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUTOR MFG COMPANY LTD

Semiconductor devices and methods of manufacturing thereof