Inventor

MAKALA RAGHUVEER S

US234 patents

⚠️ This page may combine multiple inventors who share the name “MAKALA RAGHUVEER S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MAKALA RAGHUVEER S

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device with annular blocking dielectrics and discrete charge storage elements and method of making thereof

Three-dimensional semiconductor chip containing memory die bonded to both sides of a support die and methods of making the same

Three-dimensional memory device containing air gap rails and method of making thereof

Three-dimensional memory device with annular blocking dielectrics and method of making thereof

Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof

Three-dimensional memory device with silicided word lines, air gap layers and discrete charge storage elements, and method of making thereof

Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process

Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof

Three-dimensional memory device containing a lateral source contact and method of making the same

Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Reusable support substrate for formation and transfer of semiconductor devices and methods of using the same

Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same

Ferroelectric memory device containing word lines and pass gates and method of forming the same

Three-dimensional memory device using epitaxial semiconductor channels and a buried source line and method of making the same

Three-dimensional memory device including composite word lines and multi-strip select lines and method for making the same

Three-dimensional multilevel device containing seamless unidirectional metal layer fill and method of making same

Three-dimensional memory device containing word lines formed by selective tungsten growth on nucleation controlling surfaces and methods of manufacturing the same

Three-dimensional memory device with thickened word lines in terrace region

Three-dimensional memory device having direct source contact and metal oxide blocking dielectric and method of making thereof

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same

Three dimensional memory device containing multilayer wordline barrier films and method of making thereof

Multi-tier three-dimensional memory device with stress compensation structures and method of making thereof

Three-dimensional memory device with graded word lines and methods of making the same

Three-dimensional cross rail phase change memory device and method of manufacturing the same

Three-dimensional memory device containing structurally reinforced pedestal channel portions and method of making thereof

Three-dimensional memory device having drain select level isolation structure and method of making thereof

Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof

Cobalt-containing conductive layers for control gate electrodes in a memory structure

SANDISK TECHNOLOGIES INC

Methods of fabricating a three-dimensional non-volatile memory device

High aspect ratio memory hole channel contact formation

Compact three dimensional vertical NAND and method of making thereof

Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad

Multilevel memory stack structure with joint electrode having a collar portion and methods for manufacturing the same

Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks

Three dimensional NAND device with semiconductor, metal or silicide floating gates and method of making thereof

Fluorine-free word lines for three-dimensional memory devices

Three dimensional NAND string memory devices with voids enclosed between control gate electrodes

Floating gate ultrahigh density vertical NAND flash memory

Methods of fabricating a three-dimensional non-volatile memory device

Method of making a vertical NAND device using sequential etching of multilayer stacks

Monolithic three-dimensional NAND strings and methods of fabrication thereof

Memory device containing cobalt silicide control gate electrodes and method of making thereof

Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word lines

Molybdenum-containing conductive layers for control gate electrodes in a memory structure

Three-dimensional memory structure with multi-component contact via structure and method of making thereof

Memory device containing stress-tunable control gate electrodes

Monolithic three dimensional NAND strings and methods of fabrication thereof

PACHAMUTHU JAYAVEL

High aspect ratio memory hole channel contact formation

MAKALA RAGHUVEER S

Three dimensional NAND device and method of charge trap layer separation and floating gate formation in the NAND device