Inventor

LUNG HSIANG-LAN

CN327 patents

⚠️ This page may combine multiple inventors who share the name “LUNG HSIANG-LAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LUNG HSIANG-LAN

MACRONIX INT CO LTD

Phase change memory device and manufacturing method

Vacuum jacket for phase change memory element

Stacked bit line dual word line nonvolatile memory

Thermally contained/insulated phase change memory device and method (combined)

Spacer chalcogenide memory device

Common word line edge contact phase-change memory

Thin film fuse phase change RAM and manufacturing method

Thin film plate phase change ram circuit and manufacturing method

Self-aligned small contact phase-change memory method and device

High density chalcogenide memory cells

Spacer chalcogenide memory method

Spacer chalcogenide memory method and device

Chalcogenide memory device with multiple bits per cell

Spacer chalcogenide memory method and device

Method of manufacturing self-aligned, programmable phase change memory

Self-aligned, programmable phase change memory

Memory having an interlayer insulating structure with different thermal resistance

Dynamic redundancy repair

One-transistor, one-resistor, one-capacitor phase change memory

Memory device having wide area phase change element and small electrode contact area

4F2 self align side wall active phase change memory

Phase change memory cell and manufacturing method

Thin film plate phase change RAM circuit and manufacturing method

Current compliant sensing architecture for multilevel phase change memory

Thermal isolation for an active-sidewall phase change memory cell

Memory cell device with circumferentially-extending memory element

Vacuum jacketed electrode for phase change memory element

Method for making a self-converged void and bottom electrode for memory cell

Pipe shaped phase change memory

Nonvolatile semiconductor memory device

Single-mask phase change memory element

3D NOR memory having vertical source and drain structures

Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same

Method for manufacturing 3D NAND memory using gate replacement, and resulting structures

Phase change memory with high endurance

Programming verify for nonvolatile memory

Te-free AsSeGe chalcogenides for selector devices and memory devices using same

Refresh of nonvolatile memory cells and reference cells with resistance drift

LUNG HSIANG-LAN

3D memory array arranged for FN tunneling program and erase

3D memory array arranged for FN tunneling program and erase

3D two bit-per-cell NAND flash memory

Integrated circuit 3D phase change memory array and manufacturing method

Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method

Integrated circuit 3D memory array and manufacturing method

3D integrated circuit layer interconnect

Isolation device free memory

Cross-point self-aligned reduced cell size phase change memory

Phase change memory cell array with self-converged bottom electrode and method for manufacturing

MACRONIX INTERNAT CO INC

Chalcogenide memory having a small active region

MACRONIX INTERNATION CO LTD

Horizontal chalcogenide element defined by a pad for use in solid-state memories