Inventor
NAM SEOK-WOO
KR33 patents
⚠️ This page may combine multiple inventors who share the name “NAM SEOK-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
28 patentsUS6329266B1Dec 11, 2001
Methods of forming isolation trenches including damaging a trench isolation mask
SAMSUNG ELECTRONICS CO LTD59 citations96
US6013549AJan 11, 2000
DRAM cell capacitor and method for manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations90
US9595612B2Mar 14, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD5 citations84
US9263588B2Feb 16, 2016
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations84
US6214688B1Apr 10, 2001
Methods of forming integrated circuit capacitors having U-shaped electrodes
SAMSUNG ELECTRONICS CO LTD19 citations84
US9455259B2Sep 27, 2016
Semiconductor devices including diffusion barriers with high electronegativity metals
SAMSUNG ELECTRONICS CO LTD11 citations82
US8012823B2Sep 6, 2011
Methods of fabricating stack type capacitors of semiconductor devices
SAMSUNG ELECTRONICS CO LTD8 citations82
US7741222B2Jun 22, 2010
Etch stop structure and method of manufacture, and semiconductor device and method of manufacture
SAMSUNG ELECTRONICS CO LTD17 citations81
US6133109AOct 17, 2000
Method for manufacturing a DRAM cell capacitor
SAMSUNG ELECTRONICS CO LTD9 citations74
US7833875B2Nov 16, 2010
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US7153750B2Dec 26, 2006
Methods of forming capacitors of semiconductor devices including silicon-germanium and metallic electrodes
SAMSUNG ELECTRONICS CO LTD7 citations73
US6838719B2Jan 4, 2005
Dram cell capacitors having U-shaped electrodes with rough inner and outer surfaces
SAMSUNG ELECTRONICS CO LTD10 citations73
US9153590B2Oct 6, 2015
Semiconductor devices including buried channels
SAMSUNG ELECTRONICS CO LTD4 citations72
US8969939B2Mar 3, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7928495B2Apr 19, 2011
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7521375B2Apr 21, 2009
Method of forming an oxinitride layer
SAMSUNG ELECTRONICS CO LTD2 citations62
US7119392B2Oct 10, 2006
Storage electrode of a semiconductor device and method of forming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US6215143B1Apr 10, 2001
DRAM cell capacitor having hemispherical grain silicon on a selected portion of a storage node
SAMSUNG ELECTRONICS CO LTD3 citations60
US9847422B2Dec 19, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US9449973B2Sep 20, 2016
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9184232B2Nov 10, 2015
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7297620B2Nov 20, 2007
Method of forming an oxide layer including increasing the temperature during oxidation
SAMSUNG ELECTRONICS CO LTD0 citations52
US7238585B2Jul 3, 2007
Method of forming a storage electrode of a semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US8039344B2Oct 18, 2011
Methods of forming a capacitor structure and methods of manufacturing a semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US7119029B2Oct 10, 2006
Method of oxidizing a silicon substrate and method of forming an oxide layer using the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US9230922B2Jan 5, 2016
Precursor composition for deposition of silicon dioxide film and method for fabricating semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD0 citations41
US10410839B2Sep 10, 2019
Method of processing a substrate using an ion beam and apparatus for performing the same
SAMSUNG ELECTRONICS CO LTD0 citations40
US7282407B1Oct 16, 2007
Semiconductor memory device and method of manufacturing for preventing bit line oxidation
SAMSUNG ELECTRONICS CO LTD0 citations40