Inventor
ISHIHARA KUNIHIKO
JP33 patents
⚠️ This page may combine multiple inventors who share the name “ISHIHARA KUNIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
32 patentsUS6542342B1Apr 1, 2003
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP69 citations96
US5766743AJun 16, 1998
Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
NEC CORP57 citations96
US6999287B2Feb 14, 2006
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP21 citations93
US6934132B2Aug 23, 2005
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP12 citations93
US6747853B2Jun 8, 2004
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP13 citations93
US6950290B2Sep 27, 2005
Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer
NEC CORP21 citations92
US6538861B1Mar 25, 2003
Magnetoresistive head having ferromagnetic tunnel junction film with a smaller resistance at a terminal portion than a central portion, magnetic resistance detection system with the magnetoresistive head and a magnetic storage system using it
NEC CORP44 citations92
US5989690ANov 23, 1999
Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device
NEC CORP19 citations92
US5889640AMar 30, 1999
Magnetoresistive element and sensor having optimal cross point
NEC CORP24 citations92
US5880911AMar 9, 1999
Magnetoresistive effect element
NEC CORP32 citations92
US5872502AFeb 16, 1999
Magnetoresistance effect film and production process thereof
NEC CORP21 citations92
US6903908B2Jun 7, 2005
Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer
NEC CORP16 citations84
US6147843ANov 14, 2000
Magnetoresistive effect element having magnetoresistive layer and underlying metal layer
NEC CORP17 citations84
US7369375B2May 6, 2008
Magneto-resistance effect element and magneto-resistance effect head
NEC CORP6 citations74
US7161774B2Jan 9, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP7 citations74
US6028730AFeb 22, 2000
Method and apparatus for initializing a magnetoresistive head
NEC CORP14 citations74
US5594933AJan 14, 1997
Magnetoresistance film which is a matrix of at least two specified metals having included submicron particles of a specified magnetic metal or alloy
NEC CORP15 citations74
US7372673B2May 13, 2008
Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer
NEC CORP7 citations73
US6063491AMay 16, 2000
Magnetoresistance effects film
NEC CORP12 citations73
US5917400AJun 29, 1999
Magnetoresistance effects film
NEC CORP9 citations73
US7298596B2Nov 20, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations63
US7265949B2Sep 4, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations63
US12543511B2Feb 3, 2026
Quantum device
NEC CORP0 citations62
US11774115B2Oct 3, 2023
Air conditioner and method of manufacturing piping
NEC CORP0 citations62
US6001430ADec 14, 1999
Magnetoresistance effect film and production process thereof
NEC CORP4 citations62
US7277261B2Oct 2, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP2 citations61
US10941282B2Mar 9, 2021
Cellulose resin composition, molded body and product using same
NEC CORP1 citations57
US12572835B2Mar 10, 2026
Quantum device
NEC CORP0 citations52
US12568850B2Mar 3, 2026
Quantum device
NEC CORP0 citations52
US7158355B2Jan 2, 2007
Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system
NEC CORP0 citations52
US5942341AAug 24, 1999
Magnetoresistive element
NEC CORP0 citations52
US11149133B2Oct 19, 2021
Cellulose resin composition, molded body and product using same
NEC CORP0 citations51