Inventor

SEL JONGSUN

US21 patents

⚠️ This page may combine multiple inventors who share the name “SEL JONGSUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SEL JONGSUN

SANDISK TECHNOLOGIES LLC

Metal contact via structure surrounded by an air gap and method of making thereof

Three-dimensional memory device with through-stack contact via structures and method of making thereof

Three-dimensional memory device with leakage reducing support pillar structures and method of making thereof

Vertical field effect transisitors having a rectangular surround gate and method of making the same

Array of hole-type surround gate vertical field effect transistors and method of making thereof

Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same

Methods and apparatus for three-dimensional nonvolatile memory

Triple patterning NAND flash memory

Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same

SANDISK TECHNOLOGIES INC

Triple patterning NAND flash memory with stepped mandrel

Blocking oxide in memory opening integration scheme for three-dimensional memory structure

Triple patterning NAND flash memory with SOC

Shared bit line string architecture

Processes for NAND flash memory fabrication

Memory cell floating gate replacement

Full metal gate replacement process for NAND flash memory

SEL JONGSUN

Structures and methods for making NAND flash memory

Methods of making word lines and select lines in NAND flash memory

KIM TAE-YOUNG

Non-volatile memory device and read method thereof

SAMSUNG ELECTRONICS CO LTD

Nonvolatile memory devices having dummy cell and bias methods thereof

SAMSUNG ELECTRONCIS CO LTD

Nonvolatile memory devices that utilize dummy memory cells to improve data reliability in charge trap memory arrays