Inventor
LEE KAM-LEUNG
US42 patents
⚠️ This page may combine multiple inventors who share the name “LEE KAM-LEUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
39 patentsUS6037640AMar 14, 2000
Ultra-shallow semiconductor junction formation
IBM63 citations96
US6518136B2Feb 11, 2003
Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication
IBM42 citations95
US6051483AApr 18, 2000
Formation of ultra-shallow semiconductor junction using microwave annealing
IBM53 citations95
US7705345B2Apr 27, 2010
High performance strained silicon FinFETs device and method for forming same
IBM52 citations93
US7547616B2Jun 16, 2009
Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics
IBM30 citations93
US7074684B2Jul 11, 2006
Elevated source drain disposable spacer CMOS
IBM20 citations92
US6727135B2Apr 27, 2004
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
IBM16 citations92
US6614079B2Sep 2, 2003
All-in-one disposable/permanent spacer elevated source/drain, self-aligned silicide CMOS
IBM25 citations92
US6537886B2Mar 25, 2003
Ultra-shallow semiconductor junction formation
IBM32 citations92
US6437406B1Aug 20, 2002
Super-halo formation in FETs
IBM41 citations92
US6410430B1Jun 25, 2002
Enhanced ultra-shallow junctions in CMOS using high temperature silicide process
IBM31 citations92
US6316123B1Nov 13, 2001
Microwave annealing
IBM15 citations92
US6297086B1Oct 2, 2001
Application of excimer laser anneal to DRAM processing
IBM21 citations92
US6291801B1Sep 18, 2001
Continual flow rapid thermal processing apparatus and method
IBM17 citations92
US6172399B1Jan 9, 2001
Formation of ultra-shallow semiconductor junction using microwave annealing
IBM19 citations92
US6051283AApr 18, 2000
Microwave annealing
IBM22 citations92
US4933552AJun 12, 1990
Inspection system utilizing retarding field back scattered electron collection
IBM40 citations92
US10269714B2Apr 23, 2019
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM4 citations84
US9105559B2Aug 11, 2015
Conformal doping for FinFET devices
IBM13 citations83
US6777298B2Aug 17, 2004
Elevated source drain disposable spacer CMOS
IBM8 citations74
US11101219B2Aug 24, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10985105B2Apr 20, 2021
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM3 citations73
US10833150B2Nov 10, 2020
Fast recrystallization of hafnium or zirconium based oxides in insulator-metal structures
IBM4 citations73
US10541151B1Jan 21, 2020
Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication
IBM2 citations73
US9929258B1Mar 27, 2018
Method of junction control for lateral bipolar junction transistor
IBM5 citations73
US9514997B2Dec 6, 2016
Silicon-germanium FinFET device with controlled junction
IBM5 citations73
US6743686B2Jun 1, 2004
Sacrificial polysilicon sidewall process and rapid thermal spike annealing for advance CMOS fabrication
IBM8 citations73
US6114662ASep 5, 2000
Continual flow rapid thermal processing apparatus and method
IBM11 citations73
US9196712B1Nov 24, 2015
FinFET extension regions
IBM6 citations71
US12062614B2Aug 13, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US11862567B2Jan 2, 2024
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
IBM0 citations62
US6369434B1Apr 9, 2002
Nitrogen co-implantation to form shallow junction-extensions of p-type metal oxide semiconductor field effect transistors
IBM2 citations62
US6281479B1Aug 28, 2001
Continual flow rapid thermal processing apparatus and method
IBM3 citations62
US10134882B2Nov 20, 2018
Method of junction control for lateral bipolar junction transistor
IBM0 citations52
US9922886B2Mar 20, 2018
Silicon-germanium FinFET device with controlled junction
IBM1 citations52
US9240354B2Jan 19, 2016
Semiconductor device having diffusion barrier to reduce back channel leakage
IBM0 citations52
US7691733B2Apr 6, 2010
Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics
IBM0 citations52
US7163867B2Jan 16, 2007
Method for slowing down dopant-enhanced diffusion in substrates and devices fabricated therefrom
IBM0 citations52
US10529832B2Jan 7, 2020
Shallow, abrupt and highly activated tin extension implant junction
IBM0 citations51