Inventor
FU CHING-FENG
TW62 patents
Patents
50 patentsUS10050149B1Aug 14, 2018
Gate structure for semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations92
US9412656B2Aug 9, 2016
Reverse tone self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD23 citations92
US10998228B2May 4, 2021
Self-aligned interconnect with protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10930564B2Feb 23, 2021
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9633907B2Apr 25, 2017
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9412614B2Aug 9, 2016
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US11355637B2Jun 7, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations83
US12148622B2Nov 19, 2024
Semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12009429B2Jun 11, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12009258B2Jun 11, 2024
Self-aligned interconnect with protection layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11854814B2Dec 26, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11769770B2Sep 26, 2023
Methods of forming a semiconductor device having an air spacer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11398385B2Jul 26, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10879129B2Dec 29, 2020
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9812536B2Nov 7, 2017
Reverse tone self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9590090B2Mar 7, 2017
Method of forming channel of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9570358B2Feb 14, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11380794B2Jul 5, 2022
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9911805B2Mar 6, 2018
Silicon recess etch and epitaxial deposit for shallow trench isolation (STI)
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9129823B2Sep 8, 2015
Silicon recess ETCH and epitaxial deposit for shallow trench isolation (STI)
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11355399B2Jun 7, 2022
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations71
US12527071B2Jan 13, 2026
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12477821B2Nov 18, 2025
Semiconductor device having air spacers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12272731B2Apr 8, 2025
Middle-of-line interconnect structure and manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12268027B2Apr 1, 2025
Middle-of-line interconnect structure and manufacturing method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12142532B2Nov 12, 2024
Interconnect structures for semiconductor devices and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12094768B2Sep 17, 2024
Method for sealing a seam, semiconductor structure, and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11694931B2Jul 4, 2023
Metal gate structure cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10163723B2Dec 25, 2018
Self-aligned nanowire formation using double patterning
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9741621B2Aug 22, 2017
Nano wire structure and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12471357B2Nov 11, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12382654B2Aug 5, 2025
Semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336236B2Jun 17, 2025
Semiconductor device isolation features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310051B2May 20, 2025
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211937B2Jan 28, 2025
Field effect transistor device with air gap spacer in source/drain contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119231B2Oct 15, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11935920B2Mar 19, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11916147B2Feb 27, 2024
Fin field-effect transistor device having contact plugs with re-entrant profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11888064B2Jan 30, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735667B2Aug 22, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11728218B2Aug 15, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715777B2Aug 1, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11545546B2Jan 3, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11532712B2Dec 20, 2022
Interconnect structures for semiconductor devices and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11515165B2Nov 29, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127837B2Sep 21, 2021
Method of forming MOSFET structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12293947B2May 6, 2025
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11842930B2Dec 12, 2023
Gap patterning for metal-to-source/drain plugs in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11757010B2Sep 12, 2023
Multi-stage etching process for contact formation in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US12501679B2Dec 16, 2025
Interconnect structures for semiconductor devices and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
Showing the top 50 of 62 patents by PatentIndex Score.