Inventor
LIN YIH-ANN
TW64 patents
⚠️ This page may combine multiple inventors who share the name “LIN YIH-ANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
31 patentsUS9825173B2Nov 21, 2017
FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US10916477B2Feb 9, 2021
Fin field-effect transistor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations85
US10923565B2Feb 16, 2021
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10665457B2May 26, 2020
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10658509B2May 19, 2020
FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9960160B2May 1, 2018
Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9934971B2Apr 3, 2018
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9640398B2May 2, 2017
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9601388B2Mar 21, 2017
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10038095B2Jul 31, 2018
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11901408B2Feb 13, 2024
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991627B2Apr 27, 2021
Methods for forming fin field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12015071B2Jun 18, 2024
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11355616B2Jun 7, 2022
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12557373B2Feb 17, 2026
Semiconductor fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471310B2Nov 11, 2025
Method of making a FinFET device including a step of removing a portion of a fin
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408412B2Sep 2, 2025
Air spacers around contact plugs and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376351B2Jul 29, 2025
Self-aligned contact air gap formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068199B2Aug 20, 2024
Methods for forming fin field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027370B2Jul 2, 2024
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015030B2Jun 18, 2024
Gate stacks for semiconductor devices of different conductivity types
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908939B2Feb 20, 2024
Method of making a FinFET device including a step of recessing a subset of the fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670552B2Jun 6, 2023
Methods for forming fin field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495501B2Nov 8, 2022
Fin field-effect transistor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289481B2Mar 29, 2022
Single metal that performs N work function and P work function in a high-K/metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145752B2Oct 12, 2021
Residue removal in metal gate cutting process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11121255B2Sep 14, 2021
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094825B2Aug 17, 2021
FinFET device with fins of non-uniform width
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957600B2Mar 23, 2021
Methods for forming Fin field-effect transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12490487B2Dec 2, 2025
Tunable structure profile
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
TAIWAN SEMICONDUCTOR MFG
12 patentsUS8383502B2Feb 26, 2013
Integrated high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG11 citations93
US9190496B2Nov 17, 2015
Method of making a FinFET device
TAIWAN SEMICONDUCTOR MFG14 citations92
US7759239B1Jul 20, 2010
Method of reducing a critical dimension of a semiconductor device
TAIWAN SEMICONDUCTOR MFG36 citations91
US8841731B2Sep 23, 2014
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG5 citations84
US8053323B1Nov 8, 2011
Patterning methodology for uniformity control
TAIWAN SEMICONDUCTOR MFG15 citations84
US8003507B2Aug 23, 2011
Method of integrating high-K/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG8 citations84
US7022610B2Apr 4, 2006
Wet cleaning method to eliminate copper corrosion
TAIWAN SEMICONDUCTOR MFG14 citations84
US9059085B2Jun 16, 2015
Method of forming an integrated circuit using a patterned mask layer
TAIWAN SEMICONDUCTOR MFG4 citations83
US6926818B1Aug 9, 2005
Method to enhance the adhesion between dry film and seed metal
TAIWAN SEMICONDUCTOR MFG7 citations73
US9257426B2Feb 9, 2016
Integrated high-k/metal gate in CMOS process flow
TAIWAN SEMICONDUCTOR MFG2 citations63
US7776755B2Aug 17, 2010
Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process
TAIWAN SEMICONDUCTOR MFG5 citations63
US6468704B1Oct 22, 2002
Method for improved photomask alignment after epitaxial process through 90° orientation change
TAIWAN SEMICONDUCTOR MFG6 citations62
LIN YIH-ANN
2 patentsHSIEH TZU-YEN
1 patentLin yu chao
1 patentCHEN RYAN CHIA-JEN
1 patentLIN CHIH-HAN
1 patentLIN JR JUNG
1 patentShowing the top 50 of 64 patents by PatentIndex Score.