P

Inventor

LIN YIH-ANN

TW64 patents
⚠️ This page may combine multiple inventors who share the name “LIN YIH-ANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

31 patents
US9825173B2Nov 21, 2017

FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations92
US10916477B2Feb 9, 2021

Fin field-effect transistor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD10 citations85
US10923565B2Feb 16, 2021

Self-aligned contact air gap formation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10665457B2May 26, 2020

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10658509B2May 19, 2020

FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9960160B2May 1, 2018

Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9934971B2Apr 3, 2018

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9640398B2May 2, 2017

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9601388B2Mar 21, 2017

Integrated high-K/metal gate in CMOS process flow

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10038095B2Jul 31, 2018

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11901408B2Feb 13, 2024

Self-aligned contact air gap formation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11462408B2Oct 4, 2022

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10991627B2Apr 27, 2021

Methods for forming fin field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12015071B2Jun 18, 2024

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11355616B2Jun 7, 2022

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US12557373B2Feb 17, 2026

Semiconductor fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12471310B2Nov 11, 2025

Method of making a FinFET device including a step of removing a portion of a fin

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408412B2Sep 2, 2025

Air spacers around contact plugs and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12376351B2Jul 29, 2025

Self-aligned contact air gap formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12068199B2Aug 20, 2024

Methods for forming fin field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12027370B2Jul 2, 2024

Method of forming an integrated circuit using a patterned mask layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12015030B2Jun 18, 2024

Gate stacks for semiconductor devices of different conductivity types

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11908939B2Feb 20, 2024

Method of making a FinFET device including a step of recessing a subset of the fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11670552B2Jun 6, 2023

Methods for forming fin field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495501B2Nov 8, 2022

Fin field-effect transistor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289481B2Mar 29, 2022

Single metal that performs N work function and P work function in a high-K/metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145752B2Oct 12, 2021

Residue removal in metal gate cutting process

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11121255B2Sep 14, 2021

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094825B2Aug 17, 2021

FinFET device with fins of non-uniform width

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10957600B2Mar 23, 2021

Methods for forming Fin field-effect transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12490487B2Dec 2, 2025

Tunable structure profile

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61

TAIWAN SEMICONDUCTOR MFG

12 patents

LIN YIH-ANN

2 patents

HSIEH TZU-YEN

1 patent

Lin yu chao

1 patent

CHEN RYAN CHIA-JEN

1 patent

LIN CHIH-HAN

1 patent

LIN JR JUNG

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.