P

Inventor

LIN YU-KUAN

TW84 patents
⚠️ This page may combine multiple inventors who share the name “LIN YU-KUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

39 patents
US10050045B1Aug 14, 2018

SRAM cell with balanced write port

TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US11411100B2Aug 9, 2022

Method of forming backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11710663B2Jul 25, 2023

Semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations85
US11355499B2Jun 7, 2022

Static random access memory cell

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US12080602B2Sep 3, 2024

Semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404426B2Aug 2, 2022

Controlling trap formation to improve memory window in one-time program devices

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11393831B2Jul 19, 2022

Optimized static random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121078B2Sep 14, 2021

SRAM having irregularly shaped metal lines

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11056594B2Jul 6, 2021

Semiconductor device having fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043595B2Jun 22, 2021

Cut metal gate in memory macro edge and middle strap

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10943827B2Mar 9, 2021

Semiconductor device with fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10727343B2Jul 28, 2020

Semiconductor device having fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10658242B2May 19, 2020

Structure and formation method of semiconductor device with Fin structures

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522553B2Dec 31, 2019

SRAM cell with balanced write port

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515969B2Dec 24, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12495547B2Dec 9, 2025

Controlling trap formation to improve memory window in one-time program devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446284B2Oct 14, 2025

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12408427B2Sep 2, 2025

Crown bulk for FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12402292B2Aug 26, 2025

Static random access memory with magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12376277B2Jul 29, 2025

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363893B2Jul 15, 2025

Semiconductor memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12349329B2Jul 1, 2025

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12302609B2May 13, 2025

Semiconductor device including alternating semiconductor layers with different widths and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12200921B2Jan 14, 2025

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12142684B2Nov 12, 2024

Cut metal gate in memory macro edge and middle strap

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11980016B2May 7, 2024

Connection between source/drain and gate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11961769B2Apr 16, 2024

Structure and process of integrated circuit having latch-up suppression

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11956948B2Apr 9, 2024

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856745B2Dec 26, 2023

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11792977B2Oct 17, 2023

Semiconductor memory structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11777016B2Oct 3, 2023

Method of forming backside power rails

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11751375B2Sep 5, 2023

Static random access memory with magnetic tunnel junction cells

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11737260B2Aug 22, 2023

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11728432B2Aug 15, 2023

Cut metal gate in memory macro edge and middle strap

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11678474B2Jun 13, 2023

SRAM cell with balanced write port

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621267B2Apr 4, 2023

Compact electrical connection that can be used to form an SRAM cell and method of making the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11587927B2Feb 21, 2023

Crown bulk for FinFET device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11563013B2Jan 24, 2023

Memory device and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11495503B2Nov 8, 2022

Structure and process of integrated circuit having latch-up suppression

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

GOOGLE LLC

3 patents

FIRMAN ILYA

2 patents

GOOGLE INC

2 patents

TAIWAN SEMICONDUCTOR MFG

1 patent

HUANG HUAI-YING

1 patent

HON HAI PREC IND CO LTD

1 patent

DELTA ELECTRONICS INC

1 patent

Showing the top 50 of 84 patents by PatentIndex Score.