Inventor
LIN YU-KUAN
TW84 patents
⚠️ This page may combine multiple inventors who share the name “LIN YU-KUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
39 patentsUS10050045B1Aug 14, 2018
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD33 citations94
US11411100B2Aug 9, 2022
Method of forming backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations86
US11710663B2Jul 25, 2023
Semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations85
US11355499B2Jun 7, 2022
Static random access memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US12080602B2Sep 3, 2024
Semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11404426B2Aug 2, 2022
Controlling trap formation to improve memory window in one-time program devices
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11393831B2Jul 19, 2022
Optimized static random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11121078B2Sep 14, 2021
SRAM having irregularly shaped metal lines
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11056594B2Jul 6, 2021
Semiconductor device having fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11043595B2Jun 22, 2021
Cut metal gate in memory macro edge and middle strap
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10943827B2Mar 9, 2021
Semiconductor device with fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10727343B2Jul 28, 2020
Semiconductor device having fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10658242B2May 19, 2020
Structure and formation method of semiconductor device with Fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522553B2Dec 31, 2019
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10515969B2Dec 24, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US12495547B2Dec 9, 2025
Controlling trap formation to improve memory window in one-time program devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12446284B2Oct 14, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12408427B2Sep 2, 2025
Crown bulk for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12402292B2Aug 26, 2025
Static random access memory with magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12376277B2Jul 29, 2025
Compact electrical connection that can be used to form an SRAM cell and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12363893B2Jul 15, 2025
Semiconductor memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12349329B2Jul 1, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12302609B2May 13, 2025
Semiconductor device including alternating semiconductor layers with different widths and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12200921B2Jan 14, 2025
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12142684B2Nov 12, 2024
Cut metal gate in memory macro edge and middle strap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11980016B2May 7, 2024
Connection between source/drain and gate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11961769B2Apr 16, 2024
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11956948B2Apr 9, 2024
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11856745B2Dec 26, 2023
Compact electrical connection that can be used to form an SRAM cell and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11792977B2Oct 17, 2023
Semiconductor memory structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11777016B2Oct 3, 2023
Method of forming backside power rails
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11751375B2Sep 5, 2023
Static random access memory with magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11737260B2Aug 22, 2023
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11728432B2Aug 15, 2023
Cut metal gate in memory macro edge and middle strap
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11678474B2Jun 13, 2023
SRAM cell with balanced write port
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11621267B2Apr 4, 2023
Compact electrical connection that can be used to form an SRAM cell and method of making the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11587927B2Feb 21, 2023
Crown bulk for FinFET device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11563013B2Jan 24, 2023
Memory device and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11495503B2Nov 8, 2022
Structure and process of integrated circuit having latch-up suppression
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
GOOGLE LLC
3 patentsFIRMAN ILYA
2 patentsGOOGLE INC
2 patentsTAIWAN SEMICONDUCTOR MFG
1 patentHUANG HUAI-YING
1 patentHON HAI PREC IND CO LTD
1 patentDELTA ELECTRONICS INC
1 patentShowing the top 50 of 84 patents by PatentIndex Score.